Novel ultra-low power RRAM with good endurance and retention

C. H. Cheng; Albert Chin; F. S. Yeh

doi:10.1109/VLSIT.2010.5556180

Novel ultra-low power RRAM with good endurance and retention

C. H. Cheng, Albert Chin, F. S. Yeh

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

89 Citations (Scopus)

Abstract

We report high performance RRAM of ultra-low 4 μW set power (-3.5 μA at -1.1 V), 16 pW reset power (0.12 nA at 0.13 V), large extrapolated 10-year on/off retention window of 4×105 at 85°C, good 10⁶ cycling endurance and fast 50 ns switching for the first time. These were achieved using novel covalent-bond-dielectric/metal-oxide and low cost electrodes.

Original language	English
Title of host publication	2010 Symposium on VLSI Technology, VLSIT 2010
Pages	85-86
Number of pages	2
DOIs	https://doi.org/10.1109/VLSIT.2010.5556180
Publication status	Published - 2010
Externally published	Yes
Event	2010 Symposium on VLSI Technology, VLSIT 2010 - Honolulu, HI, United States Duration: 2010 Jun 15 → 2010 Jun 17

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)	0743-1562

Other

Other	2010 Symposium on VLSI Technology, VLSIT 2010
Country/Territory	United States
City	Honolulu, HI
Period	2010/06/15 → 2010/06/17

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/VLSIT.2010.5556180

Cite this

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title = "Novel ultra-low power RRAM with good endurance and retention",

abstract = "We report high performance RRAM of ultra-low 4 μW set power (-3.5 μA at -1.1 V), 16 pW reset power (0.12 nA at 0.13 V), large extrapolated 10-year on/off retention window of 4×105 at 85°C, good 106 cycling endurance and fast 50 ns switching for the first time. These were achieved using novel covalent-bond-dielectric/metal-oxide and low cost electrodes.",

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year = "2010",

doi = "10.1109/VLSIT.2010.5556180",

language = "English",

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series = "Digest of Technical Papers - Symposium on VLSI Technology",

pages = "85--86",

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note = "2010 Symposium on VLSI Technology, VLSIT 2010 ; Conference date: 15-06-2010 Through 17-06-2010",

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AU - Chin, Albert

AU - Yeh, F. S.

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AB - We report high performance RRAM of ultra-low 4 μW set power (-3.5 μA at -1.1 V), 16 pW reset power (0.12 nA at 0.13 V), large extrapolated 10-year on/off retention window of 4×105 at 85°C, good 106 cycling endurance and fast 50 ns switching for the first time. These were achieved using novel covalent-bond-dielectric/metal-oxide and low cost electrodes.

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BT - 2010 Symposium on VLSI Technology, VLSIT 2010

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Y2 - 15 June 2010 through 17 June 2010

ER -

Novel ultra-low power RRAM with good endurance and retention

Abstract

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