Novel ultra-low power RRAM with good endurance and retention

C. H. Cheng, Albert Chin, F. S. Yeh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

70 Citations (Scopus)

Abstract

We report high performance RRAM of ultra-low 4 μW set power (-3.5 μA at -1.1 V), 16 pW reset power (0.12 nA at 0.13 V), large extrapolated 10-year on/off retention window of 4×105 at 85°C, good 106 cycling endurance and fast 50 ns switching for the first time. These were achieved using novel covalent-bond-dielectric/metal-oxide and low cost electrodes.

Original languageEnglish
Title of host publication2010 Symposium on VLSI Technology, VLSIT 2010
Pages85-86
Number of pages2
DOIs
Publication statusPublished - 2010 Oct 19
Event2010 Symposium on VLSI Technology, VLSIT 2010 - Honolulu, HI, United States
Duration: 2010 Jun 152010 Jun 17

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)0743-1562

Other

Other2010 Symposium on VLSI Technology, VLSIT 2010
CountryUnited States
CityHonolulu, HI
Period10/6/1510/6/17

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Cheng, C. H., Chin, A., & Yeh, F. S. (2010). Novel ultra-low power RRAM with good endurance and retention. In 2010 Symposium on VLSI Technology, VLSIT 2010 (pp. 85-86). [5556180] (Digest of Technical Papers - Symposium on VLSI Technology). https://doi.org/10.1109/VLSIT.2010.5556180