Novel T shape structure PCM and electrical-thermal characteristics

W. H. Wang, D. S. Chao, Y. C. Chen, C. M. Lee, H. H. Hsu, Y. Chuo, M. H. Tseng, Min-Hung Lee, W. S. Chen, M. J. Kao, M. J. Tsai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Novel interfacial layer structure was proposed with adjustable resistance ratio and more uniform data distribution capabilities. The reduction of writing power can also be expected with further optimizing the materials and corresponding thicknesses. The performance will be even better with the shrinking of contact area.

Original languageEnglish
Title of host publication2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Proceedings of Technical Papers
Pages40-41
Number of pages2
DOIs
Publication statusPublished - 2006 Dec 1
Event2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Hsinchu, Taiwan
Duration: 2006 Apr 242006 Apr 26

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings

Other

Other2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA
CountryTaiwan
CityHsinchu
Period06/4/2406/4/26

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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    Wang, W. H., Chao, D. S., Chen, Y. C., Lee, C. M., Hsu, H. H., Chuo, Y., Tseng, M. H., Lee, M-H., Chen, W. S., Kao, M. J., & Tsai, M. J. (2006). Novel T shape structure PCM and electrical-thermal characteristics. In 2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Proceedings of Technical Papers (pp. 40-41). [4016593] (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2006.251057