Novel structure in Ge/Si epilayers grown at low temperature

H. H. Cheng*, C. T. Chia, V. A. Markov, X. J. Guo, C. C. Chen, Y. H. Peng, C. H. Kuan

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

12 Citations (Scopus)


We report the growth of Ge/Si strained layer at low temperature. A new growth mode is observed where `groove islands' are formed beneath the Ge wetting layer. The new structure exhibits an Ge concentration dependent profile along the growth direction. This effect is tentatively attributed to the stress-driven intermixing of Ge/Si during the growth.

Original languageEnglish
Pages (from-to)182-184
Number of pages3
JournalThin Solid Films
Issue number1
Publication statusPublished - 2000 Jul 3
EventThe International Joint Conference on Silicon Epitaxyand Heterostructures (IJC-SI) - Miyagi, Jpn
Duration: 1999 Sept 121999 Sept 17

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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