Novel structure in Ge/Si epilayers grown at low temperature

H. H. Cheng, C. T. Chia, V. A. Markov, X. J. Guo, C. C. Chen, Y. H. Peng, C. H. Kuan

Research output: Contribution to journalConference article

12 Citations (Scopus)

Abstract

We report the growth of Ge/Si strained layer at low temperature. A new growth mode is observed where `groove islands' are formed beneath the Ge wetting layer. The new structure exhibits an Ge concentration dependent profile along the growth direction. This effect is tentatively attributed to the stress-driven intermixing of Ge/Si during the growth.

Original languageEnglish
Pages (from-to)182-184
Number of pages3
JournalThin Solid Films
Volume369
Issue number1
DOIs
Publication statusPublished - 2000 Jul 3
EventThe International Joint Conference on Silicon Epitaxyand Heterostructures (IJC-SI) - Miyagi, Jpn
Duration: 1999 Sep 121999 Sep 17

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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  • Cite this

    Cheng, H. H., Chia, C. T., Markov, V. A., Guo, X. J., Chen, C. C., Peng, Y. H., & Kuan, C. H. (2000). Novel structure in Ge/Si epilayers grown at low temperature. Thin Solid Films, 369(1), 182-184. https://doi.org/10.1016/S0040-6090(00)00802-6