Novel schottky barrier strained germanium PMOS

C. Y. Peng; F. Yuan; M. H. Lee; C. Y. Yu; S. Maikap; M. H. Liao; S. T. Chang; C. W. Liu

Novel schottky barrier strained germanium PMOS

C. Y. Peng^*, F. Yuan, M. H. Lee, C. Y. Yu, S. Maikap, M. H. Liao, S. T. Chang, C. W. Liu

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	2005 International Semiconductor Device Research Symposium
Pages	84-85
Number of pages	2
Publication status	Published - 2005
Externally published	Yes
Event	2005 International Semiconductor Device Research Symposium - Bethesda, MD, United States Duration: 2005 Dec 7 → 2005 Dec 9

Publication series

Name	2005 International Semiconductor Device Research Symposium
Volume	2005

Other

Other	2005 International Semiconductor Device Research Symposium
Country/Territory	United States
City	Bethesda, MD
Period	2005/12/07 → 2005/12/09

ASJC Scopus subject areas

General Engineering

Cite this

Peng, CY, Yuan, F, Lee, MH, Yu, CY, Maikap, S, Liao, MH, Chang, ST & Liu, CW 2005, Novel schottky barrier strained germanium PMOS. in 2005 International Semiconductor Device Research Symposium., 1595989, 2005 International Semiconductor Device Research Symposium, vol. 2005, pp. 84-85, 2005 International Semiconductor Device Research Symposium, Bethesda, MD, United States, 2005/12/07.

@inproceedings{f250f8c7399a48638f9b57785bcf4901,

title = "Novel schottky barrier strained germanium PMOS",

author = "Peng, {C. Y.} and F. Yuan and Lee, {M. H.} and Yu, {C. Y.} and S. Maikap and Liao, {M. H.} and Chang, {S. T.} and Liu, {C. W.}",

year = "2005",

language = "English",

isbn = "1424400848",

series = "2005 International Semiconductor Device Research Symposium",

pages = "84--85",

booktitle = "2005 International Semiconductor Device Research Symposium",

note = "2005 International Semiconductor Device Research Symposium ; Conference date: 07-12-2005 Through 09-12-2005",

}

TY - GEN

T1 - Novel schottky barrier strained germanium PMOS

AU - Peng, C. Y.

AU - Yuan, F.

AU - Lee, M. H.

AU - Yu, C. Y.

AU - Maikap, S.

AU - Liao, M. H.

AU - Chang, S. T.

AU - Liu, C. W.

PY - 2005

Y1 - 2005

UR - http://www.scopus.com/inward/record.url?scp=33847227314&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33847227314&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:33847227314

SN - 1424400848

SN - 9781424400843

T3 - 2005 International Semiconductor Device Research Symposium

SP - 84

EP - 85

BT - 2005 International Semiconductor Device Research Symposium

T2 - 2005 International Semiconductor Device Research Symposium

Y2 - 7 December 2005 through 9 December 2005

ER -

Novel schottky barrier strained germanium PMOS

Publication series

Other

ASJC Scopus subject areas

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Cite this