Novel schottky barrier strained germanium PMOS

C. Y. Peng, F. Yuan, M. H. Lee, C. Y. Yu, S. Maikap, M. H. Liao, S. T. Chang, C. W. Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)
Original languageEnglish
Title of host publication2005 International Semiconductor Device Research Symposium
Pages84-85
Number of pages2
Publication statusPublished - 2005 Dec 1
Event2005 International Semiconductor Device Research Symposium - Bethesda, MD, United States
Duration: 2005 Dec 72005 Dec 9

Publication series

Name2005 International Semiconductor Device Research Symposium
Volume2005

Other

Other2005 International Semiconductor Device Research Symposium
CountryUnited States
CityBethesda, MD
Period05/12/705/12/9

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Peng, C. Y., Yuan, F., Lee, M. H., Yu, C. Y., Maikap, S., Liao, M. H., Chang, S. T., & Liu, C. W. (2005). Novel schottky barrier strained germanium PMOS. In 2005 International Semiconductor Device Research Symposium (pp. 84-85). [1595989] (2005 International Semiconductor Device Research Symposium; Vol. 2005).