Novel schottky barrier strained germanium PMOS

C. Y. Peng, F. Yuan, M. H. Lee, C. Y. Yu, S. Maikap, M. H. Liao, S. T. Chang, C. W. Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)
Original languageEnglish
Title of host publication2005 International Semiconductor Device Research Symposium
Pages84-85
Number of pages2
Publication statusPublished - 2005 Dec 1
Event2005 International Semiconductor Device Research Symposium - Bethesda, MD, United States
Duration: 2005 Dec 72005 Dec 9

Publication series

Name2005 International Semiconductor Device Research Symposium
Volume2005

Other

Other2005 International Semiconductor Device Research Symposium
CountryUnited States
CityBethesda, MD
Period05/12/705/12/9

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Peng, C. Y., Yuan, F., Lee, M. H., Yu, C. Y., Maikap, S., Liao, M. H., ... Liu, C. W. (2005). Novel schottky barrier strained germanium PMOS. In 2005 International Semiconductor Device Research Symposium (pp. 84-85). [1595989] (2005 International Semiconductor Device Research Symposium; Vol. 2005).