Novel proton-gated optical transistor devices

Yang Hwang Zen; Chong Mou Wang

doi:10.1143/JJAP.34.L754

Novel proton-gated optical transistor devices

Yang Hwang Zen, Chong Mou Wang^*

^*Corresponding author for this work

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

An optical rectifier device is fabricated with thin-film 2-pyridylcarboxylic acids. The initially inactive redox centers, pyridyl nitrogens, become activated under 260 nm illumination. This photoelectrochemical behavior is ascribed to the photoinduced proton transfer reactions, via which the pyridyl nitrogens behave as stronger bases than their counterpart ground states, and trigger a substantial cathodic current to flow. The drain current is gate- potential (V_G) and drain-voltage (V_D) dependent; the optimized current collection is ca 50% at V_G= -0.62 V vs SCE and V_D = +0.6 V vs the emitter. The signal rectification efficiency reaches 0.012 with 2-pyridylacetic acid under 260 nm illumination.

Original language	English
Pages (from-to)	L754-L756
Journal	Japanese Journal of Applied Physics
Volume	34
Issue number	6
DOIs	https://doi.org/10.1143/JJAP.34.L754
Publication status	Published - 1995 Jun 1

Keywords

2-Pyridylcarboxylic acids
Optical rectifier
Photoinduced proton transfer
Rectification
Sensor

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.34.L754

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title = "Novel proton-gated optical transistor devices",

abstract = "An optical rectifier device is fabricated with thin-film 2-pyridylcarboxylic acids. The initially inactive redox centers, pyridyl nitrogens, become activated under 260 nm illumination. This photoelectrochemical behavior is ascribed to the photoinduced proton transfer reactions, via which the pyridyl nitrogens behave as stronger bases than their counterpart ground states, and trigger a substantial cathodic current to flow. The drain current is gate- potential (VG) and drain-voltage (VD) dependent; the optimized current collection is ca 50% at VG= -0.62 V vs SCE and VD = +0.6 V vs the emitter. The signal rectification efficiency reaches 0.012 with 2-pyridylacetic acid under 260 nm illumination.",

keywords = "2-Pyridylcarboxylic acids, Optical rectifier, Photoinduced proton transfer, Rectification, Sensor",

author = "Zen, {Yang Hwang} and Wang, {Chong Mou}",

year = "1995",

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doi = "10.1143/JJAP.34.L754",

language = "English",

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journal = "Japanese Journal of Applied Physics",

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T1 - Novel proton-gated optical transistor devices

AU - Zen, Yang Hwang

AU - Wang, Chong Mou

PY - 1995/6/1

Y1 - 1995/6/1

N2 - An optical rectifier device is fabricated with thin-film 2-pyridylcarboxylic acids. The initially inactive redox centers, pyridyl nitrogens, become activated under 260 nm illumination. This photoelectrochemical behavior is ascribed to the photoinduced proton transfer reactions, via which the pyridyl nitrogens behave as stronger bases than their counterpart ground states, and trigger a substantial cathodic current to flow. The drain current is gate- potential (VG) and drain-voltage (VD) dependent; the optimized current collection is ca 50% at VG= -0.62 V vs SCE and VD = +0.6 V vs the emitter. The signal rectification efficiency reaches 0.012 with 2-pyridylacetic acid under 260 nm illumination.

AB - An optical rectifier device is fabricated with thin-film 2-pyridylcarboxylic acids. The initially inactive redox centers, pyridyl nitrogens, become activated under 260 nm illumination. This photoelectrochemical behavior is ascribed to the photoinduced proton transfer reactions, via which the pyridyl nitrogens behave as stronger bases than their counterpart ground states, and trigger a substantial cathodic current to flow. The drain current is gate- potential (VG) and drain-voltage (VD) dependent; the optimized current collection is ca 50% at VG= -0.62 V vs SCE and VD = +0.6 V vs the emitter. The signal rectification efficiency reaches 0.012 with 2-pyridylacetic acid under 260 nm illumination.

KW - 2-Pyridylcarboxylic acids

KW - Optical rectifier

KW - Photoinduced proton transfer

KW - Rectification

KW - Sensor

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JF - Japanese Journal of Applied Physics

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Novel proton-gated optical transistor devices

Abstract

Keywords

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