Novel proton-gated optical transistor devices

Yang Hwang Zen, Chong Mou Wang

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

An optical rectifier device is fabricated with thin-film 2-pyridylcarboxylic acids. The initially inactive redox centers, pyridyl nitrogens, become activated under 260 nm illumination. This photoelectrochemical behavior is ascribed to the photoinduced proton transfer reactions, via which the pyridyl nitrogens behave as stronger bases than their counterpart ground states, and trigger a substantial cathodic current to flow. The drain current is gate- potential (VG) and drain-voltage (VD) dependent; the optimized current collection is ca 50% at VG= -0.62 V vs SCE and VD = +0.6 V vs the emitter. The signal rectification efficiency reaches 0.012 with 2-pyridylacetic acid under 260 nm illumination.

Original languageEnglish
Pages (from-to)L754-L756
JournalJapanese Journal of Applied Physics
Volume34
Issue number6
DOIs
Publication statusPublished - 1995 Jun 1

Fingerprint

Protons
Transistors
transistors
Lighting
Nitrogen
Proton transfer
protons
Acids
Drain current
illumination
Ground state
nitrogen
acids
rectifiers
rectification
Thin films
emitters
Electric potential
actuators
ground state

Keywords

  • 2-Pyridylcarboxylic acids
  • Optical rectifier
  • Photoinduced proton transfer
  • Rectification
  • Sensor

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Novel proton-gated optical transistor devices. / Zen, Yang Hwang; Wang, Chong Mou.

In: Japanese Journal of Applied Physics, Vol. 34, No. 6, 01.06.1995, p. L754-L756.

Research output: Contribution to journalArticle

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