Novel positive-tone thick photoresist for high aspect ratio microsystem technology

G. W. Hsieh; Y. S. Hsieh; C. R. Yang; Y. D. Lee

doi:10.1007/s00542-001-0158-2

Novel positive-tone thick photoresist for high aspect ratio microsystem technology

G. W. Hsieh, Y. S. Hsieh, C. R. Yang, Y. D. Lee^*

^*Corresponding author for this work

Department of Mechatronic Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

A methacrylate copolymer combining chemically amplified concept and casting technique was developed as a novel thick photoresist for the UV-LIGA process. Photoresist layers up to 500 μm in thickness can be fabricated easily. Microstructures fabricated by the novel thick photoresist were demonstrated. At present, the ring-shape microstructures with 150 μm tall and 15 μm wide have been realized and the calculated aspect ratio is 10.

Original language	English
Pages (from-to)	326-329
Number of pages	4
Journal	Microsystem Technologies
Volume	8
Issue number	4-5
DOIs	https://doi.org/10.1007/s00542-001-0158-2
Publication status	Published - 2002 Aug

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Hardware and Architecture
Electrical and Electronic Engineering

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10.1007/s00542-001-0158-2

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title = "Novel positive-tone thick photoresist for high aspect ratio microsystem technology",

abstract = "A methacrylate copolymer combining chemically amplified concept and casting technique was developed as a novel thick photoresist for the UV-LIGA process. Photoresist layers up to 500 μm in thickness can be fabricated easily. Microstructures fabricated by the novel thick photoresist were demonstrated. At present, the ring-shape microstructures with 150 μm tall and 15 μm wide have been realized and the calculated aspect ratio is 10.",

author = "Hsieh, {G. W.} and Hsieh, {Y. S.} and Yang, {C. R.} and Lee, {Y. D.}",

year = "2002",

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AU - Hsieh, G. W.

AU - Hsieh, Y. S.

AU - Yang, C. R.

AU - Lee, Y. D.

PY - 2002/8

Y1 - 2002/8

N2 - A methacrylate copolymer combining chemically amplified concept and casting technique was developed as a novel thick photoresist for the UV-LIGA process. Photoresist layers up to 500 μm in thickness can be fabricated easily. Microstructures fabricated by the novel thick photoresist were demonstrated. At present, the ring-shape microstructures with 150 μm tall and 15 μm wide have been realized and the calculated aspect ratio is 10.

AB - A methacrylate copolymer combining chemically amplified concept and casting technique was developed as a novel thick photoresist for the UV-LIGA process. Photoresist layers up to 500 μm in thickness can be fabricated easily. Microstructures fabricated by the novel thick photoresist were demonstrated. At present, the ring-shape microstructures with 150 μm tall and 15 μm wide have been realized and the calculated aspect ratio is 10.

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M3 - Article

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JF - Microsystem Technologies

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ER -

Novel positive-tone thick photoresist for high aspect ratio microsystem technology

Abstract

ASJC Scopus subject areas

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