Novel positive-tone thick photoresist for high aspect ratio microsystem technology

G. W. Hsieh, Y. S. Hsieh, C. R. Yang, Y. D. Lee

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

A methacrylate copolymer combining chemically amplified concept and casting technique was developed as a novel thick photoresist for the UV-LIGA process. Photoresist layers up to 500 μm in thickness can be fabricated easily. Microstructures fabricated by the novel thick photoresist were demonstrated. At present, the ring-shape microstructures with 150 μm tall and 15 μm wide have been realized and the calculated aspect ratio is 10.

Original languageEnglish
Pages (from-to)326-329
Number of pages4
JournalMicrosystem Technologies
Volume8
Issue number4-5
DOIs
Publication statusPublished - 2002 Aug 1

Fingerprint

Microsystems
Photoresists
high aspect ratio
photoresists
Aspect ratio
microstructure
Microstructure
Methacrylates
aspect ratio
copolymers
Casting
Copolymers
rings

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Novel positive-tone thick photoresist for high aspect ratio microsystem technology. / Hsieh, G. W.; Hsieh, Y. S.; Yang, C. R.; Lee, Y. D.

In: Microsystem Technologies, Vol. 8, No. 4-5, 01.08.2002, p. 326-329.

Research output: Contribution to journalArticle

Hsieh, G. W. ; Hsieh, Y. S. ; Yang, C. R. ; Lee, Y. D. / Novel positive-tone thick photoresist for high aspect ratio microsystem technology. In: Microsystem Technologies. 2002 ; Vol. 8, No. 4-5. pp. 326-329.
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