Novel photodetector using MOS tunneling structures

C. W. Liu; W. T. Liu; M. H. Lee; W. S. Kuo; B. C. Hsu

doi:10.1109/55.843159

Novel photodetector using MOS tunneling structures

C. W. Liu^*, W. T. Liu, M. H. Lee, W. S. Kuo, B. C. Hsu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

71 Citations (Scopus)

Abstract

A metal/oxide/p-Si structure with the ultrathin oxide is utilized as a photodetector. At positive gate bias, the dark current of the photodetector is limited by the thermal generation of minority carrier in the inversion layer. The high growth temperature (1000 °C) of the gate oxide can reduce the dark current to a level as low as 3 nA/cm². As biased in the inversion layer, the tunneling diode works in the deep depletion region with the soft pinning of oxide voltage, instead of the pinning of surface potential, very different from the conventional MOS diode with thick oxide.

Original language	English
Pages (from-to)	307-309
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	21
Issue number	6
DOIs	https://doi.org/10.1109/55.843159
Publication status	Published - 2000 Jun
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/55.843159

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title = "Novel photodetector using MOS tunneling structures",

abstract = "A metal/oxide/p-Si structure with the ultrathin oxide is utilized as a photodetector. At positive gate bias, the dark current of the photodetector is limited by the thermal generation of minority carrier in the inversion layer. The high growth temperature (1000 °C) of the gate oxide can reduce the dark current to a level as low as 3 nA/cm2. As biased in the inversion layer, the tunneling diode works in the deep depletion region with the soft pinning of oxide voltage, instead of the pinning of surface potential, very different from the conventional MOS diode with thick oxide.",

author = "Liu, {C. W.} and Liu, {W. T.} and Lee, {M. H.} and Kuo, {W. S.} and Hsu, {B. C.}",

note = "Funding Information: Manuscript received January 4, 2000; revised February 4, 2000. This work was supported by the National Science Council of Taiwan, R.O.C. (88-2218-E-002-004). The authors are with the Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan, R.O.C. (e-mail: [email protected]). Publisher Item Identifier S 0741-3106(00)03890-8.",

year = "2000",

month = jun,

doi = "10.1109/55.843159",

language = "English",

volume = "21",

pages = "307--309",

journal = "IEEE Electron Device Letters",

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AU - Liu, C. W.

AU - Liu, W. T.

AU - Lee, M. H.

AU - Kuo, W. S.

AU - Hsu, B. C.

N1 - Funding Information: Manuscript received January 4, 2000; revised February 4, 2000. This work was supported by the National Science Council of Taiwan, R.O.C. (88-2218-E-002-004). The authors are with the Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan, R.O.C. (e-mail: [email protected]). Publisher Item Identifier S 0741-3106(00)03890-8.

PY - 2000/6

Y1 - 2000/6

N2 - A metal/oxide/p-Si structure with the ultrathin oxide is utilized as a photodetector. At positive gate bias, the dark current of the photodetector is limited by the thermal generation of minority carrier in the inversion layer. The high growth temperature (1000 °C) of the gate oxide can reduce the dark current to a level as low as 3 nA/cm2. As biased in the inversion layer, the tunneling diode works in the deep depletion region with the soft pinning of oxide voltage, instead of the pinning of surface potential, very different from the conventional MOS diode with thick oxide.

AB - A metal/oxide/p-Si structure with the ultrathin oxide is utilized as a photodetector. At positive gate bias, the dark current of the photodetector is limited by the thermal generation of minority carrier in the inversion layer. The high growth temperature (1000 °C) of the gate oxide can reduce the dark current to a level as low as 3 nA/cm2. As biased in the inversion layer, the tunneling diode works in the deep depletion region with the soft pinning of oxide voltage, instead of the pinning of surface potential, very different from the conventional MOS diode with thick oxide.

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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Novel photodetector using MOS tunneling structures

Abstract

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