Novel photodetector using MOS tunneling structures

C. W. Liu*, W. T. Liu, M. H. Lee, W. S. Kuo, B. C. Hsu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

70 Citations (Scopus)


A metal/oxide/p-Si structure with the ultrathin oxide is utilized as a photodetector. At positive gate bias, the dark current of the photodetector is limited by the thermal generation of minority carrier in the inversion layer. The high growth temperature (1000 °C) of the gate oxide can reduce the dark current to a level as low as 3 nA/cm2. As biased in the inversion layer, the tunneling diode works in the deep depletion region with the soft pinning of oxide voltage, instead of the pinning of surface potential, very different from the conventional MOS diode with thick oxide.

Original languageEnglish
Pages (from-to)307-309
Number of pages3
JournalIEEE Electron Device Letters
Issue number6
Publication statusPublished - 2000 Jun
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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