Novel photodetector using MOS tunneling structures

C. W. Liu, W. T. Liu, M. H. Lee, W. S. Kuo, B. C. Hsu

    Research output: Contribution to journalArticlepeer-review

    63 Citations (Scopus)


    A metal/oxide/p-Si structure with the ultrathin oxide is utilized as a photodetector. At positive gate bias, the dark current of the photodetector is limited by the thermal generation of minority carrier in the inversion layer. The high growth temperature (1000 °C) of the gate oxide can reduce the dark current to a level as low as 3 nA/cm2. As biased in the inversion layer, the tunneling diode works in the deep depletion region with the soft pinning of oxide voltage, instead of the pinning of surface potential, very different from the conventional MOS diode with thick oxide.

    Original languageEnglish
    Pages (from-to)307-309
    Number of pages3
    JournalIEEE Electron Device Letters
    Issue number6
    Publication statusPublished - 2000 Jun 1

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

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