Novel photodetector using MOS tunneling structures

C. W. Liu, W. T. Liu, M. H. Lee, W. S. Kuo, B. C. Hsu

Research output: Contribution to journalArticle

58 Citations (Scopus)

Abstract

A metal/oxide/p-Si structure with the ultrathin oxide is utilized as a photodetector. At positive gate bias, the dark current of the photodetector is limited by the thermal generation of minority carrier in the inversion layer. The high growth temperature (1000 °C) of the gate oxide can reduce the dark current to a level as low as 3 nA/cm2. As biased in the inversion layer, the tunneling diode works in the deep depletion region with the soft pinning of oxide voltage, instead of the pinning of surface potential, very different from the conventional MOS diode with thick oxide.

Original languageEnglish
Pages (from-to)307-309
Number of pages3
JournalIEEE Electron Device Letters
Volume21
Issue number6
DOIs
Publication statusPublished - 2000 Jun 1

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Photodetectors
Oxides
Inversion layers
Dark currents
Diodes
Surface potential
Growth temperature
Metals
Electric potential

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Novel photodetector using MOS tunneling structures. / Liu, C. W.; Liu, W. T.; Lee, M. H.; Kuo, W. S.; Hsu, B. C.

In: IEEE Electron Device Letters, Vol. 21, No. 6, 01.06.2000, p. 307-309.

Research output: Contribution to journalArticle

Liu, C. W. ; Liu, W. T. ; Lee, M. H. ; Kuo, W. S. ; Hsu, B. C. / Novel photodetector using MOS tunneling structures. In: IEEE Electron Device Letters. 2000 ; Vol. 21, No. 6. pp. 307-309.
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