Novel Opposite Polarity Cycling Recovery (OPCR) of HfZrO2Antiferroelectric-RAM with an Access Scheme Toward Unlimited Endurance

K. Y. Hsiang; Y. C. Chen; F. S. Chang; C. Y. Lin; C. Y. Liao; Z. F. Lou; J. Y. Lee; W. C. Ray; Z. X. Li; C. C. Wang; H. C. Tseng; P. H. Chen; J. H. Tsai; M. H. Liao; T. H. Hou; C. W. Liu; P. T. Huang; P. Su; M. H. Lee

doi:10.1109/IEDM45625.2022.10019508

Novel Opposite Polarity Cycling Recovery (OPCR) of HfZrO₂Antiferroelectric-RAM with an Access Scheme Toward Unlimited Endurance

K. Y. Hsiang^*, Y. C. Chen, F. S. Chang, C. Y. Lin, C. Y. Liao, Z. F. Lou, J. Y. Lee, W. C. Ray, Z. X. Li, C. C. Wang, H. C. Tseng, P. H. Chen, J. H. Tsai, M. H. Liao, T. H. Hou, C. W. Liu, P. T. Huang, P. Su, M. H. Lee

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

8 Citations (Scopus)

Abstract

Opposite polarity cycling recovery (OPCR) is proposed for the first time to completely restore a fatigued antiferroelectric (AFE) capacitor back to its initial state, thereby extending the endurance number of switching cycles for AFE-RAM. A comprehensive model exclusive to AFE with unipolar cycling is revealed toward the prospect of unlimited endurance, and the unipolar cycling with OPCR is experimentally demonstrated to be 5.6×1011 cycles, while achieving the nondegradation and complete restoration of Pr. Furthermore, the access scheme of 1T1C AFE-RAM is presented for the proposed alternate polarity operation.

Original language	English
Title of host publication	2022 International Electron Devices Meeting, IEDM 2022
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	3251-3254
Number of pages	4
ISBN (Electronic)	9781665489591
DOIs	https://doi.org/10.1109/IEDM45625.2022.10019508
Publication status	Published - 2022
Event	2022 International Electron Devices Meeting, IEDM 2022 - San Francisco, United States Duration: 2022 Dec 3 → 2022 Dec 7

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2022-December
ISSN (Print)	0163-1918

Conference

Conference	2022 International Electron Devices Meeting, IEDM 2022
Country/Territory	United States
City	San Francisco
Period	2022/12/03 → 2022/12/07

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

Access to Document

10.1109/IEDM45625.2022.10019508

Cite this

Hsiang, K. Y., Chen, Y. C., Chang, F. S., Lin, C. Y., Liao, C. Y., Lou, Z. F., Lee, J. Y., Ray, W. C., Li, Z. X., Wang, C. C., Tseng, H. C., Chen, P. H., Tsai, J. H., Liao, M. H., Hou, T. H., Liu, C. W., Huang, P. T., Su, P., & Lee, M. H. (2022). Novel Opposite Polarity Cycling Recovery (OPCR) of HfZrO₂Antiferroelectric-RAM with an Access Scheme Toward Unlimited Endurance. In 2022 International Electron Devices Meeting, IEDM 2022 (pp. 3251-3254). (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2022-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM45625.2022.10019508

Novel Opposite Polarity Cycling Recovery (OPCR) of HfZrO₂Antiferroelectric-RAM with an Access Scheme Toward Unlimited Endurance. / Hsiang, K. Y.; Chen, Y. C.; Chang, F. S. et al.
2022 International Electron Devices Meeting, IEDM 2022. Institute of Electrical and Electronics Engineers Inc., 2022. p. 3251-3254 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2022-December).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hsiang, KY, Chen, YC, Chang, FS, Lin, CY, Liao, CY, Lou, ZF, Lee, JY, Ray, WC, Li, ZX, Wang, CC, Tseng, HC, Chen, PH, Tsai, JH, Liao, MH, Hou, TH, Liu, CW, Huang, PT, Su, P & Lee, MH 2022, Novel Opposite Polarity Cycling Recovery (OPCR) of HfZrO₂Antiferroelectric-RAM with an Access Scheme Toward Unlimited Endurance. in 2022 International Electron Devices Meeting, IEDM 2022. Technical Digest - International Electron Devices Meeting, IEDM, vol. 2022-December, Institute of Electrical and Electronics Engineers Inc., pp. 3251-3254, 2022 International Electron Devices Meeting, IEDM 2022, San Francisco, United States, 2022/12/03. https://doi.org/10.1109/IEDM45625.2022.10019508

Hsiang KY, Chen YC, Chang FS, Lin CY, Liao CY, Lou ZF et al. Novel Opposite Polarity Cycling Recovery (OPCR) of HfZrO₂Antiferroelectric-RAM with an Access Scheme Toward Unlimited Endurance. In 2022 International Electron Devices Meeting, IEDM 2022. Institute of Electrical and Electronics Engineers Inc. 2022. p. 3251-3254. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM45625.2022.10019508

Hsiang, K. Y. ; Chen, Y. C. ; Chang, F. S. et al. / Novel Opposite Polarity Cycling Recovery (OPCR) of HfZrO₂Antiferroelectric-RAM with an Access Scheme Toward Unlimited Endurance. 2022 International Electron Devices Meeting, IEDM 2022. Institute of Electrical and Electronics Engineers Inc., 2022. pp. 3251-3254 (Technical Digest - International Electron Devices Meeting, IEDM).

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abstract = "Opposite polarity cycling recovery (OPCR) is proposed for the first time to completely restore a fatigued antiferroelectric (AFE) capacitor back to its initial state, thereby extending the endurance number of switching cycles for AFE-RAM. A comprehensive model exclusive to AFE with unipolar cycling is revealed toward the prospect of unlimited endurance, and the unipolar cycling with OPCR is experimentally demonstrated to be 5.6×1011 cycles, while achieving the nondegradation and complete restoration of Pr. Furthermore, the access scheme of 1T1C AFE-RAM is presented for the proposed alternate polarity operation.",

author = "Hsiang, {K. Y.} and Chen, {Y. C.} and Chang, {F. S.} and Lin, {C. Y.} and Liao, {C. Y.} and Lou, {Z. F.} and Lee, {J. Y.} and Ray, {W. C.} and Li, {Z. X.} and Wang, {C. C.} and Tseng, {H. C.} and Chen, {P. H.} and Tsai, {J. H.} and Liao, {M. H.} and Hou, {T. H.} and Liu, {C. W.} and Huang, {P. T.} and P. Su and Lee, {M. H.}",

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AB - Opposite polarity cycling recovery (OPCR) is proposed for the first time to completely restore a fatigued antiferroelectric (AFE) capacitor back to its initial state, thereby extending the endurance number of switching cycles for AFE-RAM. A comprehensive model exclusive to AFE with unipolar cycling is revealed toward the prospect of unlimited endurance, and the unipolar cycling with OPCR is experimentally demonstrated to be 5.6×1011 cycles, while achieving the nondegradation and complete restoration of Pr. Furthermore, the access scheme of 1T1C AFE-RAM is presented for the proposed alternate polarity operation.

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