Skip to main navigation
Skip to search
Skip to main content
National Taiwan Normal University Home
Help & FAQ
English
中文
Home
Profiles
Research Units
Research output
Projects
Press / Media
Datasets
Activities
Prizes
Student theses
Search by expertise, name or affiliation
Novel methods to incorporate deuterium in the MOS structures
M. H. Lee
*
, C. H. Lin, C. W. Liu
*
Corresponding author for this work
Research output
:
Contribution to journal
›
Article
›
peer-review
6
Citations (Scopus)
Overview
Fingerprint
Fingerprint
Dive into the research topics of 'Novel methods to incorporate deuterium in the MOS structures'. Together they form a unique fingerprint.
Sort by
Weight
Alphabetically
Engineering & Materials Science
Deuterium
100%
Oxides
39%
Interface states
17%
Vacuum
10%
Oxidation
10%
Hot Temperature
5%
Chemical Compounds
Deuterium(.)
63%
Oxide
18%
Interface State
17%
Vacuum
9%
Oxidation Reaction
5%
Reaction Yield
4%