Novel methods to incorporate deuterium in the MOS structures

M. H. Lee; C. H. Lin; C. W. Liu

doi:10.1109/55.962649

Novel methods to incorporate deuterium in the MOS structures

M. H. Lee^*
, C. H. Lin
, C. W. Liu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

The deuterium concentration as high as 2 × 10 ²⁰ cm ^-3 can be incorporated in rapid thermal oxide layers by a process of deuterium prebake and deuterium post oxidation anneal. The deuterium distributed not only at Si/oxide interface but also in the bulk oxide. The deuterium incorporation shows the improvement on soft breakdown characteristics and the interface state density at SiO ₂/Si after stress. The addition of very high vacuum prebake process yields a deuterium concentration of 9 × 10 ²⁰ cm ^-3, but also leads to the formation of rough oxide.

Original language	English
Pages (from-to)	519-521
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	22
Issue number	11
DOIs	https://doi.org/10.1109/55.962649
Publication status	Published - 2001 Nov
Externally published	Yes

Keywords

Deuterium incorporation
Interface states
MOS
Very high vacuum prebake

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/55.962649

Cite this

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title = "Novel methods to incorporate deuterium in the MOS structures",

abstract = "The deuterium concentration as high as 2 × 10 20 cm -3 can be incorporated in rapid thermal oxide layers by a process of deuterium prebake and deuterium post oxidation anneal. The deuterium distributed not only at Si/oxide interface but also in the bulk oxide. The deuterium incorporation shows the improvement on soft breakdown characteristics and the interface state density at SiO 2/Si after stress. The addition of very high vacuum prebake process yields a deuterium concentration of 9 × 10 20 cm -3, but also leads to the formation of rough oxide.",

keywords = "Deuterium incorporation, Interface states, MOS, Very high vacuum prebake",

author = "Lee, \{M. H.\} and Lin, \{C. H.\} and Liu, \{C. W.\}",

note = "Funding Information: Manuscript received June 26, 2001; revised August 6, 2001. This work was supported by the National Science Council of Taiwan, R.O.C., (89-2218-E-002-082, 89-2218-E-002-054) and TSMC (Taiwan Semiconductor Manufacturing Company). The review of this letter was arranged by Editor K. De Meyer.",

year = "2001",

month = nov,

doi = "10.1109/55.962649",

language = "English",

volume = "22",

pages = "519--521",

journal = "IEEE Electron Device Letters",

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T1 - Novel methods to incorporate deuterium in the MOS structures

AU - Lee, M. H.

AU - Lin, C. H.

AU - Liu, C. W.

N1 - Funding Information: Manuscript received June 26, 2001; revised August 6, 2001. This work was supported by the National Science Council of Taiwan, R.O.C., (89-2218-E-002-082, 89-2218-E-002-054) and TSMC (Taiwan Semiconductor Manufacturing Company). The review of this letter was arranged by Editor K. De Meyer.

PY - 2001/11

Y1 - 2001/11

N2 - The deuterium concentration as high as 2 × 10 20 cm -3 can be incorporated in rapid thermal oxide layers by a process of deuterium prebake and deuterium post oxidation anneal. The deuterium distributed not only at Si/oxide interface but also in the bulk oxide. The deuterium incorporation shows the improvement on soft breakdown characteristics and the interface state density at SiO 2/Si after stress. The addition of very high vacuum prebake process yields a deuterium concentration of 9 × 10 20 cm -3, but also leads to the formation of rough oxide.

AB - The deuterium concentration as high as 2 × 10 20 cm -3 can be incorporated in rapid thermal oxide layers by a process of deuterium prebake and deuterium post oxidation anneal. The deuterium distributed not only at Si/oxide interface but also in the bulk oxide. The deuterium incorporation shows the improvement on soft breakdown characteristics and the interface state density at SiO 2/Si after stress. The addition of very high vacuum prebake process yields a deuterium concentration of 9 × 10 20 cm -3, but also leads to the formation of rough oxide.

KW - Deuterium incorporation

KW - Interface states

KW - MOS

KW - Very high vacuum prebake

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DO - 10.1109/55.962649

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EP - 521

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 11

ER -

Novel methods to incorporate deuterium in the MOS structures

Abstract

Keywords

ASJC Scopus subject areas

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