Abstract
The deuterium concentration as high as 2 × 10 20 cm -3 can be incorporated in rapid thermal oxide layers by a process of deuterium prebake and deuterium post oxidation anneal. The deuterium distributed not only at Si/oxide interface but also in the bulk oxide. The deuterium incorporation shows the improvement on soft breakdown characteristics and the interface state density at SiO 2/Si after stress. The addition of very high vacuum prebake process yields a deuterium concentration of 9 × 10 20 cm -3, but also leads to the formation of rough oxide.
Original language | English |
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Pages (from-to) | 519-521 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 22 |
Issue number | 11 |
DOIs | |
Publication status | Published - 2001 Nov |
Externally published | Yes |
Keywords
- Deuterium incorporation
- Interface states
- MOS
- Very high vacuum prebake
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering