Novel methods to incorporate deuterium in the MOS structures

M. H. Lee*, C. H. Lin, C. W. Liu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


The deuterium concentration as high as 2 × 10 20 cm -3 can be incorporated in rapid thermal oxide layers by a process of deuterium prebake and deuterium post oxidation anneal. The deuterium distributed not only at Si/oxide interface but also in the bulk oxide. The deuterium incorporation shows the improvement on soft breakdown characteristics and the interface state density at SiO 2/Si after stress. The addition of very high vacuum prebake process yields a deuterium concentration of 9 × 10 20 cm -3, but also leads to the formation of rough oxide.

Original languageEnglish
Pages (from-to)519-521
Number of pages3
JournalIEEE Electron Device Letters
Issue number11
Publication statusPublished - 2001 Nov
Externally publishedYes


  • Deuterium incorporation
  • Interface states
  • MOS
  • Very high vacuum prebake

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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