Novel methods to incorporate deuterium in the MOS structures

M. H. Lee; C. H. Lin; C. W. Liu

doi:10.1109/55.962649

Novel methods to incorporate deuterium in the MOS structures

M. H. Lee^*, C. H. Lin, C. W. Liu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

The deuterium concentration as high as 2 × 10 ²⁰ cm ^-3 can be incorporated in rapid thermal oxide layers by a process of deuterium prebake and deuterium post oxidation anneal. The deuterium distributed not only at Si/oxide interface but also in the bulk oxide. The deuterium incorporation shows the improvement on soft breakdown characteristics and the interface state density at SiO ₂/Si after stress. The addition of very high vacuum prebake process yields a deuterium concentration of 9 × 10 ²⁰ cm ^-3, but also leads to the formation of rough oxide.

Original language	English
Pages (from-to)	519-521
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	22
Issue number	11
DOIs	https://doi.org/10.1109/55.962649
Publication status	Published - 2001 Nov
Externally published	Yes

Keywords

Deuterium incorporation
Interface states
MOS
Very high vacuum prebake

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/55.962649

Cite this

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title = "Novel methods to incorporate deuterium in the MOS structures",

abstract = "The deuterium concentration as high as 2 × 10 20 cm -3 can be incorporated in rapid thermal oxide layers by a process of deuterium prebake and deuterium post oxidation anneal. The deuterium distributed not only at Si/oxide interface but also in the bulk oxide. The deuterium incorporation shows the improvement on soft breakdown characteristics and the interface state density at SiO 2/Si after stress. The addition of very high vacuum prebake process yields a deuterium concentration of 9 × 10 20 cm -3, but also leads to the formation of rough oxide.",

keywords = "Deuterium incorporation, Interface states, MOS, Very high vacuum prebake",

author = "Lee, {M. H.} and Lin, {C. H.} and Liu, {C. W.}",

note = "Funding Information: Manuscript received June 26, 2001; revised August 6, 2001. This work was supported by the National Science Council of Taiwan, R.O.C., (89-2218-E-002-082, 89-2218-E-002-054) and TSMC (Taiwan Semiconductor Manufacturing Company). The review of this letter was arranged by Editor K. De Meyer.",

year = "2001",

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journal = "IEEE Electron Device Letters",

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AU - Lee, M. H.

AU - Lin, C. H.

AU - Liu, C. W.

N1 - Funding Information: Manuscript received June 26, 2001; revised August 6, 2001. This work was supported by the National Science Council of Taiwan, R.O.C., (89-2218-E-002-082, 89-2218-E-002-054) and TSMC (Taiwan Semiconductor Manufacturing Company). The review of this letter was arranged by Editor K. De Meyer.

PY - 2001/11

Y1 - 2001/11

N2 - The deuterium concentration as high as 2 × 10 20 cm -3 can be incorporated in rapid thermal oxide layers by a process of deuterium prebake and deuterium post oxidation anneal. The deuterium distributed not only at Si/oxide interface but also in the bulk oxide. The deuterium incorporation shows the improvement on soft breakdown characteristics and the interface state density at SiO 2/Si after stress. The addition of very high vacuum prebake process yields a deuterium concentration of 9 × 10 20 cm -3, but also leads to the formation of rough oxide.

AB - The deuterium concentration as high as 2 × 10 20 cm -3 can be incorporated in rapid thermal oxide layers by a process of deuterium prebake and deuterium post oxidation anneal. The deuterium distributed not only at Si/oxide interface but also in the bulk oxide. The deuterium incorporation shows the improvement on soft breakdown characteristics and the interface state density at SiO 2/Si after stress. The addition of very high vacuum prebake process yields a deuterium concentration of 9 × 10 20 cm -3, but also leads to the formation of rough oxide.

KW - Deuterium incorporation

KW - Interface states

KW - MOS

KW - Very high vacuum prebake

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Novel methods to incorporate deuterium in the MOS structures

Abstract

Keywords

ASJC Scopus subject areas

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