Novel methods to incorporate deuterium in the MOS structures

M. H. Lee, C. H. Lin, C. W. Liu

    Research output: Contribution to journalArticlepeer-review

    6 Citations (Scopus)


    The deuterium concentration as high as 2 × 10 20 cm -3 can be incorporated in rapid thermal oxide layers by a process of deuterium prebake and deuterium post oxidation anneal. The deuterium distributed not only at Si/oxide interface but also in the bulk oxide. The deuterium incorporation shows the improvement on soft breakdown characteristics and the interface state density at SiO 2/Si after stress. The addition of very high vacuum prebake process yields a deuterium concentration of 9 × 10 20 cm -3, but also leads to the formation of rough oxide.

    Original languageEnglish
    Pages (from-to)519-521
    Number of pages3
    JournalIEEE Electron Device Letters
    Issue number11
    Publication statusPublished - 2001 Nov 1


    • Deuterium incorporation
    • Interface states
    • MOS
    • Very high vacuum prebake

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

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