Novel methods to incorporate deuterium in the MOS structures

Min-Hung Lee, C. H. Lin, C. W. Liu

    Research output: Contribution to journalArticle

    6 Citations (Scopus)

    Abstract

    The deuterium concentration as high as 2 × 10 20 cm -3 can be incorporated in rapid thermal oxide layers by a process of deuterium prebake and deuterium post oxidation anneal. The deuterium distributed not only at Si/oxide interface but also in the bulk oxide. The deuterium incorporation shows the improvement on soft breakdown characteristics and the interface state density at SiO 2 /Si after stress. The addition of very high vacuum prebake process yields a deuterium concentration of 9 × 10 20 cm -3 , but also leads to the formation of rough oxide.

    Original languageEnglish
    Pages (from-to)519-521
    Number of pages3
    JournalIEEE Electron Device Letters
    Volume22
    Issue number11
    DOIs
    Publication statusPublished - 2001 Nov 1

    Fingerprint

    Deuterium
    Oxides
    Interface states
    Vacuum
    Oxidation

    Keywords

    • Deuterium incorporation
    • Interface states
    • MOS
    • Very high vacuum prebake

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

    Cite this

    Novel methods to incorporate deuterium in the MOS structures. / Lee, Min-Hung; Lin, C. H.; Liu, C. W.

    In: IEEE Electron Device Letters, Vol. 22, No. 11, 01.11.2001, p. 519-521.

    Research output: Contribution to journalArticle

    Lee, Min-Hung ; Lin, C. H. ; Liu, C. W. / Novel methods to incorporate deuterium in the MOS structures. In: IEEE Electron Device Letters. 2001 ; Vol. 22, No. 11. pp. 519-521.
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