Abstract
In this paper, we investigated several kinds of a-Si:H TFTs structures fabricated on polyimide (PI) substrate at 160 °C under 1×10 4 cycles of mechanical bending stress. After mechanical bending stress, the threshold voltage of different a-Si:H TFTs structures have different shift. It is a critical task to optimize suitable design for a-Si:H TFTs on flexible substrate. L-shape design a-Si:H TFTs with better stability after bending stress. It is a good candidate for the SOP or pixel array on flexible substrate.
| Original language | English |
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| Pages | 723-726 |
| Number of pages | 4 |
| Publication status | Published - 2006 |
| Externally published | Yes |
| Event | 13th International Display Workshops, IDW '06 - Otsu, Japan Duration: 2006 Dec 6 → 2006 Dec 6 |
Conference
| Conference | 13th International Display Workshops, IDW '06 |
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| Country/Territory | Japan |
| City | Otsu |
| Period | 2006/12/06 → 2006/12/06 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Radiology Nuclear Medicine and imaging
- Atomic and Molecular Physics, and Optics