TY - GEN
T1 - Novel atomic dynamics at W (111) surfaces
AU - Fu, Tsu Yi
AU - Wong, Weng J.
AU - Tsong, Tien T.
PY - 2010
Y1 - 2010
N2 - Ultra high vacuum- field ion microscopy was used to study the atomic dynamics at W (111) surfaces. Over hundreds of the observations for atomic processes such as the terrace diffusion, ascending, descending, detachment motion on W (111) surfaces, we find that the activation energy of W clusters diffusion on W (111) as a function of cluster size has an oscillatory and increasing behavior. But, the activation energy of a single W atom is high anomalously. The compact geometric structures are more stable and have higher activation energies of surface diffusion than structures with extra atoms at the periphery. Unlike the general systems, the occurrence temperatures of different processes at W (111) are quite near. These experimental results were used to discuss the formation mechanism of single atom W tips.
AB - Ultra high vacuum- field ion microscopy was used to study the atomic dynamics at W (111) surfaces. Over hundreds of the observations for atomic processes such as the terrace diffusion, ascending, descending, detachment motion on W (111) surfaces, we find that the activation energy of W clusters diffusion on W (111) as a function of cluster size has an oscillatory and increasing behavior. But, the activation energy of a single W atom is high anomalously. The compact geometric structures are more stable and have higher activation energies of surface diffusion than structures with extra atoms at the periphery. Unlike the general systems, the occurrence temperatures of different processes at W (111) are quite near. These experimental results were used to discuss the formation mechanism of single atom W tips.
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U2 - 10.1109/INEC.2010.5425152
DO - 10.1109/INEC.2010.5425152
M3 - Conference contribution
AN - SCOPUS:77951660313
SN - 9781424435449
T3 - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
SP - 885
EP - 886
BT - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
T2 - 2010 3rd International Nanoelectronics Conference, INEC 2010
Y2 - 3 January 2010 through 8 January 2010
ER -