Nontrivial Raman Characteristics in 2D Non-Van der Waals Mo5N6

Ching Hsiang Yao, Hongze Gao, Lu Ping, Desman Perdamaian Gulo, Hsiang Lin Liu, Nguyen Tuan Hung, Riichiro Saito*, Xi Ling*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Resonant Raman spectra of a two-dimensional (2D) non-van der Waals (vdW) material, molybdenum nitride (Mo5N6), are measured across varying thicknesses, ranging from a few to tens of nanometers. Fifteen distinct Raman peaks are observed experimentally, and their assignments are made using first-principles calculations for the most stable AABB-stacking structure of Mo5N6. The assignments are further supported by angular-dependent Raman measurements for all peaks, except the most intense one at 215 cm-1. Calculations reveal that the 215 cm-1 peak does not appear for three-dimensional molybdenum nitrides and is not a first-order Raman-active mode. We further investigated the origin of the 215 cm-1 peak and assigned it as a defect-induced double-resonance peak. Moreover, thickness-dependent Raman measurements reveal that both the 215 and 540 cm-1 peaks─assigned to out-of-plane and in-plane modes, respectively─blue shift as thickness increases, reaching a plateau around 20 nm. This thickness-dependent Raman shift over a wide thickness range is nontrivial compared to other common vdW 2D materials and is attributed to the much stronger stacking interaction between the constituent layers in non-vdW materials. This finding highlights Raman spectroscopy as a valuable tool for characterizing the thickness of 2D non-vdW materials.

Original languageEnglish
Pages (from-to)32458-32467
Number of pages10
JournalACS Nano
Volume18
Issue number47
DOIs
Publication statusPublished - 2024 Nov 26

Keywords

  • Brite-Wigner-Fano (BWF)
  • defect-induced peak
  • metal nitrides
  • resonant Raman
  • thickness dependence
  • two-dimensional materials

ASJC Scopus subject areas

  • General Materials Science
  • General Engineering
  • General Physics and Astronomy

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