Nonlinear bidirectional selector without rare materials for stackable cross-bar bipolar memory applications

Min Hung Lee; Jun Dao Luo; Chih Ching Cheng; Jian Shiou Huang; Yu Lun Chueh; Chih Wei Chen; Tai Yuan Wu; Yu Sheng Chen; Heng Yuan Lee; Fred Chen; Ming Jinn Tsai

doi:10.7567/JJAP.53.08LE03

Nonlinear bidirectional selector without rare materials for stackable cross-bar bipolar memory applications

Min Hung Lee^*, Jun Dao Luo, Chih Ching Cheng, Jian Shiou Huang, Yu Lun Chueh, Chih Wei Chen, Tai Yuan Wu, Yu Sheng Chen, Heng Yuan Lee, Fred Chen, Ming Jinn Tsai

^*Corresponding author for this work

Undergraduate Program of Electro-Optical Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The advantage of a nonlinear bidirectional selector is its high access ratio with multiple transport mechanisms in a wide bias range. The multilayer structure of TiN/Al₂O₃/TiO₂/Al ₂O₃/Ti with a nonlinear varistor characteristic is proposed. The features of the structure include its low-temperature process (~250°C) for stackable applications, non-requirement of rare materials such as Pt, and its high access ratio (~3200). The varistor characteristic of the nonlinear selector is discussed and attributed to carrier tunneling and thermionic emission for small biases (OFF state) and large biases (ON state), respectively. The selector shows scaling feasibility owing to its property of inertness to SiO₂ encapsulation and is compatible with the current IC and memory industry.

Original language	English
Article number	08LE03
Journal	Japanese Journal of Applied Physics
Volume	53
Issue number	8 SPEC. ISSUE 1
DOIs	https://doi.org/10.7567/JJAP.53.08LE03
Publication status	Published - 2014 Aug

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

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title = "Nonlinear bidirectional selector without rare materials for stackable cross-bar bipolar memory applications",

abstract = "The advantage of a nonlinear bidirectional selector is its high access ratio with multiple transport mechanisms in a wide bias range. The multilayer structure of TiN/Al2O3/TiO2/Al 2O3/Ti with a nonlinear varistor characteristic is proposed. The features of the structure include its low-temperature process (~250°C) for stackable applications, non-requirement of rare materials such as Pt, and its high access ratio (~3200). The varistor characteristic of the nonlinear selector is discussed and attributed to carrier tunneling and thermionic emission for small biases (OFF state) and large biases (ON state), respectively. The selector shows scaling feasibility owing to its property of inertness to SiO2 encapsulation and is compatible with the current IC and memory industry.",

author = "Lee, {Min Hung} and Luo, {Jun Dao} and Cheng, {Chih Ching} and Huang, {Jian Shiou} and Chueh, {Yu Lun} and Chen, {Chih Wei} and Wu, {Tai Yuan} and Chen, {Yu Sheng} and Lee, {Heng Yuan} and Fred Chen and Tsai, {Ming Jinn}",

year = "2014",

month = aug,

doi = "10.7567/JJAP.53.08LE03",

language = "English",

volume = "53",

journal = "Japanese Journal of Applied Physics",

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publisher = "Japan Society of Applied Physics",

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T1 - Nonlinear bidirectional selector without rare materials for stackable cross-bar bipolar memory applications

AU - Lee, Min Hung

AU - Luo, Jun Dao

AU - Cheng, Chih Ching

AU - Huang, Jian Shiou

AU - Chueh, Yu Lun

AU - Chen, Chih Wei

AU - Wu, Tai Yuan

AU - Chen, Yu Sheng

AU - Lee, Heng Yuan

AU - Chen, Fred

AU - Tsai, Ming Jinn

PY - 2014/8

Y1 - 2014/8

N2 - The advantage of a nonlinear bidirectional selector is its high access ratio with multiple transport mechanisms in a wide bias range. The multilayer structure of TiN/Al2O3/TiO2/Al 2O3/Ti with a nonlinear varistor characteristic is proposed. The features of the structure include its low-temperature process (~250°C) for stackable applications, non-requirement of rare materials such as Pt, and its high access ratio (~3200). The varistor characteristic of the nonlinear selector is discussed and attributed to carrier tunneling and thermionic emission for small biases (OFF state) and large biases (ON state), respectively. The selector shows scaling feasibility owing to its property of inertness to SiO2 encapsulation and is compatible with the current IC and memory industry.

AB - The advantage of a nonlinear bidirectional selector is its high access ratio with multiple transport mechanisms in a wide bias range. The multilayer structure of TiN/Al2O3/TiO2/Al 2O3/Ti with a nonlinear varistor characteristic is proposed. The features of the structure include its low-temperature process (~250°C) for stackable applications, non-requirement of rare materials such as Pt, and its high access ratio (~3200). The varistor characteristic of the nonlinear selector is discussed and attributed to carrier tunneling and thermionic emission for small biases (OFF state) and large biases (ON state), respectively. The selector shows scaling feasibility owing to its property of inertness to SiO2 encapsulation and is compatible with the current IC and memory industry.

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M3 - Article

AN - SCOPUS:84906059871

SN - 0021-4922

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JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 8 SPEC. ISSUE 1

M1 - 08LE03

ER -

Nonlinear bidirectional selector without rare materials for stackable cross-bar bipolar memory applications

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