Nonlinear bidirectional selector without rare materials for stackable cross-bar bipolar memory applications

Min-Hung Lee, Jun Dao Luo, Chih Ching Cheng, Jian Shiou Huang, Yu Lun Chueh, Chih Wei Chen, Tai Yuan Wu, Yu Sheng Chen, Heng Yuan Lee, Fred Chen, Ming Jinn Tsai

    Research output: Contribution to journalArticle

    1 Citation (Scopus)

    Abstract

    The advantage of a nonlinear bidirectional selector is its high access ratio with multiple transport mechanisms in a wide bias range. The multilayer structure of TiN/Al2O3/TiO2/Al 2O3/Ti with a nonlinear varistor characteristic is proposed. The features of the structure include its low-temperature process (~250°C) for stackable applications, non-requirement of rare materials such as Pt, and its high access ratio (~3200). The varistor characteristic of the nonlinear selector is discussed and attributed to carrier tunneling and thermionic emission for small biases (OFF state) and large biases (ON state), respectively. The selector shows scaling feasibility owing to its property of inertness to SiO2 encapsulation and is compatible with the current IC and memory industry.

    Original languageEnglish
    Article number08LE03
    JournalJapanese Journal of Applied Physics
    Volume53
    Issue number8 SPEC. ISSUE 1
    DOIs
    Publication statusPublished - 2014 Jan 1

    Fingerprint

    Varistors
    selectors
    varistors
    Data storage equipment
    Thermionic emission
    Encapsulation
    Multilayers
    thermionic emission
    laminates
    industries
    scaling
    Industry
    Temperature

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

    Cite this

    Lee, M-H., Luo, J. D., Cheng, C. C., Huang, J. S., Chueh, Y. L., Chen, C. W., ... Tsai, M. J. (2014). Nonlinear bidirectional selector without rare materials for stackable cross-bar bipolar memory applications. Japanese Journal of Applied Physics, 53(8 SPEC. ISSUE 1), [08LE03]. https://doi.org/10.7567/JJAP.53.08LE03

    Nonlinear bidirectional selector without rare materials for stackable cross-bar bipolar memory applications. / Lee, Min-Hung; Luo, Jun Dao; Cheng, Chih Ching; Huang, Jian Shiou; Chueh, Yu Lun; Chen, Chih Wei; Wu, Tai Yuan; Chen, Yu Sheng; Lee, Heng Yuan; Chen, Fred; Tsai, Ming Jinn.

    In: Japanese Journal of Applied Physics, Vol. 53, No. 8 SPEC. ISSUE 1, 08LE03, 01.01.2014.

    Research output: Contribution to journalArticle

    Lee, M-H, Luo, JD, Cheng, CC, Huang, JS, Chueh, YL, Chen, CW, Wu, TY, Chen, YS, Lee, HY, Chen, F & Tsai, MJ 2014, 'Nonlinear bidirectional selector without rare materials for stackable cross-bar bipolar memory applications', Japanese Journal of Applied Physics, vol. 53, no. 8 SPEC. ISSUE 1, 08LE03. https://doi.org/10.7567/JJAP.53.08LE03
    Lee, Min-Hung ; Luo, Jun Dao ; Cheng, Chih Ching ; Huang, Jian Shiou ; Chueh, Yu Lun ; Chen, Chih Wei ; Wu, Tai Yuan ; Chen, Yu Sheng ; Lee, Heng Yuan ; Chen, Fred ; Tsai, Ming Jinn. / Nonlinear bidirectional selector without rare materials for stackable cross-bar bipolar memory applications. In: Japanese Journal of Applied Physics. 2014 ; Vol. 53, No. 8 SPEC. ISSUE 1.
    @article{6265063947164e57b05c2553bfc90574,
    title = "Nonlinear bidirectional selector without rare materials for stackable cross-bar bipolar memory applications",
    abstract = "The advantage of a nonlinear bidirectional selector is its high access ratio with multiple transport mechanisms in a wide bias range. The multilayer structure of TiN/Al2O3/TiO2/Al 2O3/Ti with a nonlinear varistor characteristic is proposed. The features of the structure include its low-temperature process (~250°C) for stackable applications, non-requirement of rare materials such as Pt, and its high access ratio (~3200). The varistor characteristic of the nonlinear selector is discussed and attributed to carrier tunneling and thermionic emission for small biases (OFF state) and large biases (ON state), respectively. The selector shows scaling feasibility owing to its property of inertness to SiO2 encapsulation and is compatible with the current IC and memory industry.",
    author = "Min-Hung Lee and Luo, {Jun Dao} and Cheng, {Chih Ching} and Huang, {Jian Shiou} and Chueh, {Yu Lun} and Chen, {Chih Wei} and Wu, {Tai Yuan} and Chen, {Yu Sheng} and Lee, {Heng Yuan} and Fred Chen and Tsai, {Ming Jinn}",
    year = "2014",
    month = "1",
    day = "1",
    doi = "10.7567/JJAP.53.08LE03",
    language = "English",
    volume = "53",
    journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
    issn = "0021-4922",
    publisher = "Japan Society of Applied Physics",
    number = "8 SPEC. ISSUE 1",

    }

    TY - JOUR

    T1 - Nonlinear bidirectional selector without rare materials for stackable cross-bar bipolar memory applications

    AU - Lee, Min-Hung

    AU - Luo, Jun Dao

    AU - Cheng, Chih Ching

    AU - Huang, Jian Shiou

    AU - Chueh, Yu Lun

    AU - Chen, Chih Wei

    AU - Wu, Tai Yuan

    AU - Chen, Yu Sheng

    AU - Lee, Heng Yuan

    AU - Chen, Fred

    AU - Tsai, Ming Jinn

    PY - 2014/1/1

    Y1 - 2014/1/1

    N2 - The advantage of a nonlinear bidirectional selector is its high access ratio with multiple transport mechanisms in a wide bias range. The multilayer structure of TiN/Al2O3/TiO2/Al 2O3/Ti with a nonlinear varistor characteristic is proposed. The features of the structure include its low-temperature process (~250°C) for stackable applications, non-requirement of rare materials such as Pt, and its high access ratio (~3200). The varistor characteristic of the nonlinear selector is discussed and attributed to carrier tunneling and thermionic emission for small biases (OFF state) and large biases (ON state), respectively. The selector shows scaling feasibility owing to its property of inertness to SiO2 encapsulation and is compatible with the current IC and memory industry.

    AB - The advantage of a nonlinear bidirectional selector is its high access ratio with multiple transport mechanisms in a wide bias range. The multilayer structure of TiN/Al2O3/TiO2/Al 2O3/Ti with a nonlinear varistor characteristic is proposed. The features of the structure include its low-temperature process (~250°C) for stackable applications, non-requirement of rare materials such as Pt, and its high access ratio (~3200). The varistor characteristic of the nonlinear selector is discussed and attributed to carrier tunneling and thermionic emission for small biases (OFF state) and large biases (ON state), respectively. The selector shows scaling feasibility owing to its property of inertness to SiO2 encapsulation and is compatible with the current IC and memory industry.

    UR - http://www.scopus.com/inward/record.url?scp=84906059871&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=84906059871&partnerID=8YFLogxK

    U2 - 10.7567/JJAP.53.08LE03

    DO - 10.7567/JJAP.53.08LE03

    M3 - Article

    VL - 53

    JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

    JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

    SN - 0021-4922

    IS - 8 SPEC. ISSUE 1

    M1 - 08LE03

    ER -