Fingerprint
Dive into the research topics of 'Non-Volatile Ferroelectric FETs Using 5-nm Hf0.5Zr0.5O2 with High Data Retention and Read Endurance for 1T Memory Applications'. Together they form a unique fingerprint.- Sort by
- Weight
- Alphabetically
Non-Volatile Ferroelectric FETs Using 5-nm Hf0.5Zr0.5O2 with High Data Retention and Read Endurance for 1T Memory Applications
K. T. Chen, H. Y. Chen, C. Y. Liao, G. Y. Siang, C. Lo, M. H. Liao, K. S. Li, S. T. Chang, M. H. Lee*
*Corresponding author for this work
Research output: Contribution to journal › Article › peer-review
96
Citations
(Scopus)