Non-Volatile Ferroelectric FETs Using 5-nm Hf0.5Zr0.5O2 with High Data Retention and Read Endurance for 1T Memory Applications

K. T. Chen, H. Y. Chen, C. Y. Liao, G. Y. Siang, C. Lo, M. H. Liao, K. S. Li, S. T. Chang, M. H. Lee*

*Corresponding author for this work

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