FeFETs with 5-nm-Thick Hf0.5Zr0.5O2 (HZO) have been demonstrated in memory operations for the ON/OFF current ratio >104 at zero gate voltage and a memory window (MW) of 0.6-0.7 V. A gradual transition of the ferroelectricity with an increasing crystallization temperature for the gate-last process was presented. The excellent data retention are the ∼2×104 ON/OFF ratio and 0.67 V extrapolated to ten years with VP/E = ±4.8 V. The MW remains >0.2 V after 106 cycles for read and vanishes with cycles of 103-104 for write, which is the bottleneck for ferroelectric (FE)-Type memories. The mechanism of retention and endurance is discussed. The characteristic of this letter is an unaffected coercive-field (1 MV/cm) with scaling FE-HZO down to 5-nm thickness, which is beneficial for reducing the operation voltage. A comparable performance with thick HZO (>5 nm) on high data retention and endurance with low voltage for read is achieved. The ultrathin FE layer proposes a realistic emerging memory for 1T architecture.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering