Non-Volatile Ferroelectric FETs Using 5-nm Hf0.5Zr0.5O2 with High Data Retention and Read Endurance for 1T Memory Applications

K. T. Chen, H. Y. Chen, C. Y. Liao, G. Y. Siang, C. Lo, M. H. Liao, K. S. Li, S. T. Chang, M. H. Lee

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

FeFETs with 5-nm-Thick Hf0.5Zr0.5O2 (HZO) have been demonstrated in memory operations for the ON/OFF current ratio >104 at zero gate voltage and a memory window (MW) of 0.6-0.7 V. A gradual transition of the ferroelectricity with an increasing crystallization temperature for the gate-last process was presented. The excellent data retention are the ∼2×104 ON/OFF ratio and 0.67 V extrapolated to ten years with VP/E = ±4.8 V. The MW remains >0.2 V after 106 cycles for read and vanishes with cycles of 103-104 for write, which is the bottleneck for ferroelectric (FE)-Type memories. The mechanism of retention and endurance is discussed. The characteristic of this letter is an unaffected coercive-field (1 MV/cm) with scaling FE-HZO down to 5-nm thickness, which is beneficial for reducing the operation voltage. A comparable performance with thick HZO (>5 nm) on high data retention and endurance with low voltage for read is achieved. The ultrathin FE layer proposes a realistic emerging memory for 1T architecture.

Original languageEnglish
Article number8630859
Pages (from-to)399-402
Number of pages4
JournalIEEE Electron Device Letters
Volume40
Issue number3
DOIs
Publication statusPublished - 2019 Mar

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Keywords

  • Memory
  • endurance
  • ferroelectric
  • retention

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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