Abstract
In this paper, a polycrystalline silicon (polysilicon) thin-film transistor with a block oxide enclosing body, BTFT, is fabricated and investigated. By utilizing the block-oxide structure of thin-film transistors, the BTFT is shown to suppress the short channel effect. This proposed structure is formed by burying self-aligned oxide spacers along the sidewalls of the source and drain junctions, which reduces the P-N junction area, thereby reducing the junction capacitance and leakage current. Measurements demonstrate that the BTFT eliminates the punch-through effect even down to gate lengths of 1.5 νm, whereas the conventional TFT suffers serious short channel effects at this gate length.
Original language | English |
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Article number | 075007 |
Journal | Semiconductor Science and Technology |
Volume | 23 |
Issue number | 7 |
DOIs | |
Publication status | Published - 2008 Jul 1 |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry