Non-classical polycrystalline silicon thin-film transistor with embedded block-oxide for suppressing the short channel effect

Jyi Tsong Lin, Kuo Dong Huang, Shu-Fen Hu

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

In this paper, a polycrystalline silicon (polysilicon) thin-film transistor with a block oxide enclosing body, BTFT, is fabricated and investigated. By utilizing the block-oxide structure of thin-film transistors, the BTFT is shown to suppress the short channel effect. This proposed structure is formed by burying self-aligned oxide spacers along the sidewalls of the source and drain junctions, which reduces the P-N junction area, thereby reducing the junction capacitance and leakage current. Measurements demonstrate that the BTFT eliminates the punch-through effect even down to gate lengths of 1.5 νm, whereas the conventional TFT suffers serious short channel effects at this gate length.

Original languageEnglish
Article number075007
JournalSemiconductor Science and Technology
Volume23
Issue number7
DOIs
Publication statusPublished - 2008 Jul 1

Fingerprint

Thin film transistors
Polysilicon
Oxides
transistors
oxides
silicon
thin films
punches
Leakage currents
spacers
leakage
Capacitance
capacitance

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

Non-classical polycrystalline silicon thin-film transistor with embedded block-oxide for suppressing the short channel effect. / Lin, Jyi Tsong; Huang, Kuo Dong; Hu, Shu-Fen.

In: Semiconductor Science and Technology, Vol. 23, No. 7, 075007, 01.07.2008.

Research output: Contribution to journalArticle

@article{f504a275f968468c894321356b98074e,
title = "Non-classical polycrystalline silicon thin-film transistor with embedded block-oxide for suppressing the short channel effect",
abstract = "In this paper, a polycrystalline silicon (polysilicon) thin-film transistor with a block oxide enclosing body, BTFT, is fabricated and investigated. By utilizing the block-oxide structure of thin-film transistors, the BTFT is shown to suppress the short channel effect. This proposed structure is formed by burying self-aligned oxide spacers along the sidewalls of the source and drain junctions, which reduces the P-N junction area, thereby reducing the junction capacitance and leakage current. Measurements demonstrate that the BTFT eliminates the punch-through effect even down to gate lengths of 1.5 νm, whereas the conventional TFT suffers serious short channel effects at this gate length.",
author = "Lin, {Jyi Tsong} and Huang, {Kuo Dong} and Shu-Fen Hu",
year = "2008",
month = "7",
day = "1",
doi = "10.1088/0268-1242/23/7/075007",
language = "English",
volume = "23",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "IOP Publishing Ltd.",
number = "7",

}

TY - JOUR

T1 - Non-classical polycrystalline silicon thin-film transistor with embedded block-oxide for suppressing the short channel effect

AU - Lin, Jyi Tsong

AU - Huang, Kuo Dong

AU - Hu, Shu-Fen

PY - 2008/7/1

Y1 - 2008/7/1

N2 - In this paper, a polycrystalline silicon (polysilicon) thin-film transistor with a block oxide enclosing body, BTFT, is fabricated and investigated. By utilizing the block-oxide structure of thin-film transistors, the BTFT is shown to suppress the short channel effect. This proposed structure is formed by burying self-aligned oxide spacers along the sidewalls of the source and drain junctions, which reduces the P-N junction area, thereby reducing the junction capacitance and leakage current. Measurements demonstrate that the BTFT eliminates the punch-through effect even down to gate lengths of 1.5 νm, whereas the conventional TFT suffers serious short channel effects at this gate length.

AB - In this paper, a polycrystalline silicon (polysilicon) thin-film transistor with a block oxide enclosing body, BTFT, is fabricated and investigated. By utilizing the block-oxide structure of thin-film transistors, the BTFT is shown to suppress the short channel effect. This proposed structure is formed by burying self-aligned oxide spacers along the sidewalls of the source and drain junctions, which reduces the P-N junction area, thereby reducing the junction capacitance and leakage current. Measurements demonstrate that the BTFT eliminates the punch-through effect even down to gate lengths of 1.5 νm, whereas the conventional TFT suffers serious short channel effects at this gate length.

UR - http://www.scopus.com/inward/record.url?scp=47749155243&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=47749155243&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/23/7/075007

DO - 10.1088/0268-1242/23/7/075007

M3 - Article

VL - 23

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 7

M1 - 075007

ER -