Non-classical polycrystalline silicon thin-film transistor with embedded block-oxide for suppressing the short channel effect

Jyi Tsong Lin, Kuo Dong Huang, Shu Fen Hu

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

In this paper, a polycrystalline silicon (polysilicon) thin-film transistor with a block oxide enclosing body, BTFT, is fabricated and investigated. By utilizing the block-oxide structure of thin-film transistors, the BTFT is shown to suppress the short channel effect. This proposed structure is formed by burying self-aligned oxide spacers along the sidewalls of the source and drain junctions, which reduces the P-N junction area, thereby reducing the junction capacitance and leakage current. Measurements demonstrate that the BTFT eliminates the punch-through effect even down to gate lengths of 1.5 νm, whereas the conventional TFT suffers serious short channel effects at this gate length.

Original languageEnglish
Article number075007
JournalSemiconductor Science and Technology
Volume23
Issue number7
DOIs
Publication statusPublished - 2008 Jul 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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