TY - GEN
T1 - NLS based Modeling and Characterization of Switching Dynamics for Antiferroelectric/Ferroelectric Hafnium Zirconium Oxides
AU - Chen, Yu Chen
AU - Hsiang, Kuo Yu
AU - Tang, Ying Tsan
AU - Lee, Min Hung
AU - Su, Pin
N1 - Funding Information:
This work is supported in part by the Ministry of Science and Technology, Taiwan, under 110-2218-E-A49-014-MBK, 110-2221-E-A49-136-MY2 and 110-2634-F-009-027, and in part by the "Center for Semiconductor Technology Research" from the Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education in Taiwan.
Publisher Copyright:
© 2021 IEEE.
PY - 2021
Y1 - 2021
N2 - In this work, we have conducted an NLS-based Monte-Carlo modeling and characterization for antiferroelectric/ferroelectric (AFE/FE) Hf1-xZrxO2 (HZO). With the coexistence of orthorhombic-phase (FE) and tetragonal-phase (AFE) grains and the crucial consideration of back-switching field, our generalized NLS model is capable of describing the switching dynamics and frequency response of AFE/FE HZO. Our experimentally verified model is adequate for modeling HZO with certain AFE and FE properties, which can be beneficial to future memory applications and neuromorphic computing.
AB - In this work, we have conducted an NLS-based Monte-Carlo modeling and characterization for antiferroelectric/ferroelectric (AFE/FE) Hf1-xZrxO2 (HZO). With the coexistence of orthorhombic-phase (FE) and tetragonal-phase (AFE) grains and the crucial consideration of back-switching field, our generalized NLS model is capable of describing the switching dynamics and frequency response of AFE/FE HZO. Our experimentally verified model is adequate for modeling HZO with certain AFE and FE properties, which can be beneficial to future memory applications and neuromorphic computing.
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U2 - 10.1109/IEDM19574.2021.9720645
DO - 10.1109/IEDM19574.2021.9720645
M3 - Conference contribution
AN - SCOPUS:85126961912
T3 - Technical Digest - International Electron Devices Meeting, IEDM
SP - 15.4.1-15.4.4
BT - 2021 IEEE International Electron Devices Meeting, IEDM 2021
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2021 IEEE International Electron Devices Meeting, IEDM 2021
Y2 - 11 December 2021 through 16 December 2021
ER -