Nitrogen-induced enhancement of the electron effective mass in InN xAs1-x

W. K. Hung; K. S. Cho; M. Y. Chern; Y. F. Chen; D. K. Shih; H. H. Lin; C. C. Lu; T. R. Yang

doi:10.1063/1.1436524

Nitrogen-induced enhancement of the electron effective mass in InN _xAs_1-x

W. K. Hung, K. S. Cho, M. Y. Chern, Y. F. Chen, D. K. Shih, H. H. Lin, C. C. Lu, T. R. Yang

Department of Physics

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27 Citations (Scopus)

Abstract

The electron effective mass in n-type InN_xAs_1-x (with x up to 3.0%) grown by gas-source molecular-beam epitaxy was obtained from infrared reflectivity and Hall-effect measurements. The large increase of the effective mass due to the incorporation of nitrogen is attributed mainly to the nitrogen-induced modification on the electronic states near the conduction-band edge. The well-known band anticrossing (BAC) model for the electronic structure of the III-N-V alloys cannot well describe the experimental data, especially in the region of higher electron concentration. This result provides an opportunity to examine the "universality" of the BAC model.

Original language	English
Pages (from-to)	796-798
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	5
DOIs	https://doi.org/10.1063/1.1436524
Publication status	Published - 2002 Feb 4

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1436524

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title = "Nitrogen-induced enhancement of the electron effective mass in InN xAs1-x",

abstract = "The electron effective mass in n-type InNxAs1-x (with x up to 3.0%) grown by gas-source molecular-beam epitaxy was obtained from infrared reflectivity and Hall-effect measurements. The large increase of the effective mass due to the incorporation of nitrogen is attributed mainly to the nitrogen-induced modification on the electronic states near the conduction-band edge. The well-known band anticrossing (BAC) model for the electronic structure of the III-N-V alloys cannot well describe the experimental data, especially in the region of higher electron concentration. This result provides an opportunity to examine the {"}universality{"} of the BAC model.",

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T1 - Nitrogen-induced enhancement of the electron effective mass in InN xAs1-x

AU - Hung, W. K.

AU - Cho, K. S.

AU - Chern, M. Y.

AU - Chen, Y. F.

AU - Shih, D. K.

AU - Lin, H. H.

AU - Lu, C. C.

AU - Yang, T. R.

PY - 2002/2/4

Y1 - 2002/2/4

N2 - The electron effective mass in n-type InNxAs1-x (with x up to 3.0%) grown by gas-source molecular-beam epitaxy was obtained from infrared reflectivity and Hall-effect measurements. The large increase of the effective mass due to the incorporation of nitrogen is attributed mainly to the nitrogen-induced modification on the electronic states near the conduction-band edge. The well-known band anticrossing (BAC) model for the electronic structure of the III-N-V alloys cannot well describe the experimental data, especially in the region of higher electron concentration. This result provides an opportunity to examine the "universality" of the BAC model.

AB - The electron effective mass in n-type InNxAs1-x (with x up to 3.0%) grown by gas-source molecular-beam epitaxy was obtained from infrared reflectivity and Hall-effect measurements. The large increase of the effective mass due to the incorporation of nitrogen is attributed mainly to the nitrogen-induced modification on the electronic states near the conduction-band edge. The well-known band anticrossing (BAC) model for the electronic structure of the III-N-V alloys cannot well describe the experimental data, especially in the region of higher electron concentration. This result provides an opportunity to examine the "universality" of the BAC model.

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Nitrogen-induced enhancement of the electron effective mass in InN _xAs_1-x

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