Nitrogen-induced enhancement of the electron effective mass in InN xAs1-x

W. K. Hung, K. S. Cho, M. Y. Chern, Y. F. Chen, D. K. Shih, H. H. Lin, C. C. Lu, T. R. Yang

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Abstract

The electron effective mass in n-type InNxAs1-x (with x up to 3.0%) grown by gas-source molecular-beam epitaxy was obtained from infrared reflectivity and Hall-effect measurements. The large increase of the effective mass due to the incorporation of nitrogen is attributed mainly to the nitrogen-induced modification on the electronic states near the conduction-band edge. The well-known band anticrossing (BAC) model for the electronic structure of the III-N-V alloys cannot well describe the experimental data, especially in the region of higher electron concentration. This result provides an opportunity to examine the "universality" of the BAC model.

Original languageEnglish
Pages (from-to)796-798
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number5
DOIs
Publication statusPublished - 2002 Feb 4

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Hung, W. K., Cho, K. S., Chern, M. Y., Chen, Y. F., Shih, D. K., Lin, H. H., Lu, C. C., & Yang, T. R. (2002). Nitrogen-induced enhancement of the electron effective mass in InN xAs1-x. Applied Physics Letters, 80(5), 796-798. https://doi.org/10.1063/1.1436524