Nitrogen-doped tungsten oxide nanowires: Low-temperature synthesis on Si, and electrical, optical, and field-emission properties

Mu Tung Chang, Li Jen Chou, Yu Lun Chueh, Yu Chen Lee, Chin Hua Hsieh, Chii Dong Chen, Yann Wen Lan, Lih Juann Chen

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92 Citations (Scopus)


Very dense and uniformly distributed nitrogen-doped tungsten oxide (WO 3) nanowires were synthesized successfully on a 4-inch Si(100) wafer at low temperature. The nanowires were of lengths extending up to 5 μm and diameters ranging from 25 to 35 nm. The highest aspect ratio was estimated to be about 200. An emission peak at 470 nm was found by photoluminescence measurement at room temperature. The suggested growth mechanism of the nanowires is vapor-solid growth, in which gaseous ammonia plays a significant role to reduce the formation temperature. The approach has proved to be a reliable way to produce nitrogen-doped WO3 nanowires on Si in large quantities. The direct fabrication of WO3-based nanodevices on Si has been demonstrated.

Original languageEnglish
Pages (from-to)658-664
Number of pages7
Issue number4
Publication statusPublished - 2007 Apr 1
Externally publishedYes



  • Doping
  • Field emission
  • Nanowires
  • Photoluminescence
  • Tungsten oxide

ASJC Scopus subject areas

  • Biotechnology
  • Biomaterials
  • Chemistry(all)
  • Materials Science(all)

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