Ni/GeOx/TiOy/TaN RRAM on flexible substrate with excellent resistance distribution

K. I. Chou; C. H. Cheng; Z. W. Zheng; Ming Liu; Albert Chin

doi:10.1109/LED.2013.2243814

Ni/GeO_x/TiO_y/TaN RRAM on flexible substrate with excellent resistance distribution

K. I. Chou^*, C. H. Cheng, Z. W. Zheng, Ming Liu, Albert Chin

^*Corresponding author for this work

Department of Mechatronic Engineering

Research output: Contribution to journal › Article › peer-review

42 Citations (Scopus)

Abstract

Excellent device-to-device distribution was achieved in high-performance Ni/GeO_x/TiO_y/TaN resistive random access memory on low-cost flexible plastics, with low 30-μW switching power (9μA at 3 V;-1μA at-3 V), 10⁵ cycling endurance, and good retention at 85 °C. These were ascribed to bulk transport property by tunneling between traps, forming-free resistive switching, and the less destructive low power switching.

Original language	English
Article number	6471736
Pages (from-to)	505-507
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	34
Issue number	4
DOIs	https://doi.org/10.1109/LED.2013.2243814
Publication status	Published - 2013

Keywords

Flexible electronics
GeO
TiO
resistive random access memory (RRAM)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2013.2243814

Cite this

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