Ni/GeOx/TiOy/TaN RRAM on flexible substrate with excellent resistance distribution

K. I. Chou*, C. H. Cheng, Z. W. Zheng, Ming Liu, Albert Chin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

45 Citations (Scopus)


Excellent device-to-device distribution was achieved in high-performance Ni/GeOx/TiOy/TaN resistive random access memory on low-cost flexible plastics, with low 30-μW switching power (9μA at 3 V;-1μA at-3 V), 105 cycling endurance, and good retention at 85 °C. These were ascribed to bulk transport property by tunneling between traps, forming-free resistive switching, and the less destructive low power switching.

Original languageEnglish
Article number6471736
Pages (from-to)505-507
Number of pages3
JournalIEEE Electron Device Letters
Issue number4
Publication statusPublished - 2013


  • Flexible electronics
  • GeO
  • TiO
  • resistive random access memory (RRAM)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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