Abstract
Excellent device-to-device distribution was achieved in high-performance Ni/GeOx/TiOy/TaN resistive random access memory on low-cost flexible plastics, with low 30-μW switching power (9μA at 3 V;-1μA at-3 V), 105 cycling endurance, and good retention at 85 °C. These were ascribed to bulk transport property by tunneling between traps, forming-free resistive switching, and the less destructive low power switching.
Original language | English |
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Article number | 6471736 |
Pages (from-to) | 505-507 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 34 |
Issue number | 4 |
DOIs | |
Publication status | Published - 2013 |
Keywords
- Flexible electronics
- GeO
- TiO
- resistive random access memory (RRAM)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering