Ni/GeOx/TiOy/TaN RRAM on flexible substrate with excellent resistance distribution

K. I. Chou, Chun-Hu Cheng, Z. W. Zheng, Ming Liu, Albert Chin

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

Excellent device-to-device distribution was achieved in high-performance Ni/GeOx/TiOy/TaN resistive random access memory on low-cost flexible plastics, with low 30-μW switching power (9μA at 3 V;-1μA at-3 V), 105 cycling endurance, and good retention at 85 °C. These were ascribed to bulk transport property by tunneling between traps, forming-free resistive switching, and the less destructive low power switching.

Original languageEnglish
Article number6471736
Pages (from-to)505-507
Number of pages3
JournalIEEE Electron Device Letters
Volume34
Issue number4
DOIs
Publication statusPublished - 2013 Mar 11

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Substrates
Transport properties
Durability
Plastics
Data storage equipment
RRAM
Costs

Keywords

  • Flexible electronics
  • GeO
  • TiO
  • resistive random access memory (RRAM)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Ni/GeOx/TiOy/TaN RRAM on flexible substrate with excellent resistance distribution. / Chou, K. I.; Cheng, Chun-Hu; Zheng, Z. W.; Liu, Ming; Chin, Albert.

In: IEEE Electron Device Letters, Vol. 34, No. 4, 6471736, 11.03.2013, p. 505-507.

Research output: Contribution to journalArticle

Chou, K. I. ; Cheng, Chun-Hu ; Zheng, Z. W. ; Liu, Ming ; Chin, Albert. / Ni/GeOx/TiOy/TaN RRAM on flexible substrate with excellent resistance distribution. In: IEEE Electron Device Letters. 2013 ; Vol. 34, No. 4. pp. 505-507.
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