Nickel Schottky junction on epi-Ge for strained Ge metal-oxide- semiconductor field-effect transistors source/drain engineering

M. H. Lee, B. F. Hsieh, S. T. Chang, S. W. Lee

    Research output: Contribution to journalArticlepeer-review

    2 Citations (Scopus)

    Abstract

    In this study, the nano-scale epi-Ge/Si fabrication and the Schottky junction source/drain manufacture with Ni incorporation are demonstrated. The Ni Schottky junction formation by laser annealing (LA) and rapid thermal annealing, as well as the barrier height and interface characteristics, are discussed. Improvement in the density of interface trap (D it) can be achieved by LA; this technology enhances the opportunity of high Ge concentration SiGe channel to play a part in the next-generation complementary metal-oxide-semiconductor applications.

    Original languageEnglish
    Pages (from-to)3379-3381
    Number of pages3
    JournalThin Solid Films
    Volume520
    Issue number8
    DOIs
    Publication statusPublished - 2012 Feb 1

    Keywords

    • Barrier
    • Interface
    • Schottky
    • SiGe

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films
    • Metals and Alloys
    • Materials Chemistry

    Fingerprint Dive into the research topics of 'Nickel Schottky junction on epi-Ge for strained Ge metal-oxide- semiconductor field-effect transistors source/drain engineering'. Together they form a unique fingerprint.

    Cite this