Nickel Schottky junction on epi-Ge for strained Ge metal-oxide- semiconductor field-effect transistors source/drain engineering

M. H. Lee, B. F. Hsieh, S. T. Chang, S. W. Lee

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In this study, the nano-scale epi-Ge/Si fabrication and the Schottky junction source/drain manufacture with Ni incorporation are demonstrated. The Ni Schottky junction formation by laser annealing (LA) and rapid thermal annealing, as well as the barrier height and interface characteristics, are discussed. Improvement in the density of interface trap (D it) can be achieved by LA; this technology enhances the opportunity of high Ge concentration SiGe channel to play a part in the next-generation complementary metal-oxide-semiconductor applications.

Original languageEnglish
Pages (from-to)3379-3381
Number of pages3
JournalThin Solid Films
Volume520
Issue number8
DOIs
Publication statusPublished - 2012 Feb 1

Fingerprint

laser annealing
MOSFET devices
Nickel
metal oxide semiconductors
field effect transistors
nickel
engineering
Annealing
Lasers
Rapid thermal annealing
CMOS
Metals
traps
Fabrication
fabrication
annealing
Oxide semiconductors

Keywords

  • Barrier
  • Interface
  • Schottky
  • SiGe

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Nickel Schottky junction on epi-Ge for strained Ge metal-oxide- semiconductor field-effect transistors source/drain engineering. / Lee, M. H.; Hsieh, B. F.; Chang, S. T.; Lee, S. W.

In: Thin Solid Films, Vol. 520, No. 8, 01.02.2012, p. 3379-3381.

Research output: Contribution to journalArticle

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