New mechanism for gate oxide degradation and its applications

Chuan H. Liu, K. Y. Fu, Thomas A. DeMassa, Julian J. Sanchez

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A surface plasmon (SP) based anode hole injection model for gate oxide degradation/breakdown is presented. This model proposes that the hole trapping in the oxide is mainly due to injected holes from the anode that are generated by the decay of the SP's to electron-hole pairs at the anode interface, finally resulting in oxide breakdown when the trapped positive charge accumulates to a critical value. The surface plasmon excitation energy is shown to decrease with increasing temperature, which in turn causes the positive charge generation to increase and the charge to breakdown to decrease.

Original languageEnglish
Title of host publicationInternational Integrated Reliability Workshop Final Report
PublisherIEEE
Pages68-71
Number of pages4
Publication statusPublished - 1998
Externally publishedYes
EventProceedings of the 1998 IEEE International Integrated Reliability Workshop - Lake Tahoe, CA, USA
Duration: 1998 Oct 121998 Oct 15

Other

OtherProceedings of the 1998 IEEE International Integrated Reliability Workshop
CityLake Tahoe, CA, USA
Period98/10/1298/10/15

Fingerprint

Anodes
Degradation
Oxides
Excitation energy
Electrons
Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering

Cite this

Liu, C. H., Fu, K. Y., DeMassa, T. A., & Sanchez, J. J. (1998). New mechanism for gate oxide degradation and its applications. In International Integrated Reliability Workshop Final Report (pp. 68-71). IEEE.

New mechanism for gate oxide degradation and its applications. / Liu, Chuan H.; Fu, K. Y.; DeMassa, Thomas A.; Sanchez, Julian J.

International Integrated Reliability Workshop Final Report. IEEE, 1998. p. 68-71.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Liu, CH, Fu, KY, DeMassa, TA & Sanchez, JJ 1998, New mechanism for gate oxide degradation and its applications. in International Integrated Reliability Workshop Final Report. IEEE, pp. 68-71, Proceedings of the 1998 IEEE International Integrated Reliability Workshop, Lake Tahoe, CA, USA, 98/10/12.
Liu CH, Fu KY, DeMassa TA, Sanchez JJ. New mechanism for gate oxide degradation and its applications. In International Integrated Reliability Workshop Final Report. IEEE. 1998. p. 68-71
Liu, Chuan H. ; Fu, K. Y. ; DeMassa, Thomas A. ; Sanchez, Julian J. / New mechanism for gate oxide degradation and its applications. International Integrated Reliability Workshop Final Report. IEEE, 1998. pp. 68-71
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