New experimental findings on SILC and SBD of ultra-thin gate oxides

M. G. Chen; Chuan H. Liu; Ming T. Lee; K. Y. Fu

New experimental findings on SILC and SBD of ultra-thin gate oxides

M. G. Chen^*, Chuan H. Liu, Ming T. Lee, K. Y. Fu

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

Abstract

It is widely believed that stress-induced leakage current (SILC) and soft breakdown (SBD) of ultra-thin (tox <5 nm) gate oxides are due to trap-assisted tunneling (TAT). In this paper, through the use of carrier separation method and annealing experiments, we argue that SILC is not only contributed by trap-assisted tunneling of conduction band electrons but also by trap-assisted tunneling of valence band electrons. It is proposed in this paper that the traps are mainly donor-like.

Original language	English
Pages	114-117
Number of pages	4
Publication status	Published - 1999
Externally published	Yes
Event	1999 IEEE International Integrated Reliability Workshop - Lake Tahoe, CA, USA Duration: 1999 Oct 18 → 1999 Oct 21

Other

Other	1999 IEEE International Integrated Reliability Workshop
City	Lake Tahoe, CA, USA
Period	1999/10/18 → 1999/10/21

ASJC Scopus subject areas

Electrical and Electronic Engineering
Industrial and Manufacturing Engineering

Cite this

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title = "New experimental findings on SILC and SBD of ultra-thin gate oxides",

abstract = "It is widely believed that stress-induced leakage current (SILC) and soft breakdown (SBD) of ultra-thin (tox <5 nm) gate oxides are due to trap-assisted tunneling (TAT). In this paper, through the use of carrier separation method and annealing experiments, we argue that SILC is not only contributed by trap-assisted tunneling of conduction band electrons but also by trap-assisted tunneling of valence band electrons. It is proposed in this paper that the traps are mainly donor-like.",

author = "Chen, {M. G.} and Liu, {Chuan H.} and Lee, {Ming T.} and Fu, {K. Y.}",

year = "1999",

language = "English",

pages = "114--117",

note = "1999 IEEE International Integrated Reliability Workshop ; Conference date: 18-10-1999 Through 21-10-1999",

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TY - CONF

T1 - New experimental findings on SILC and SBD of ultra-thin gate oxides

AU - Chen, M. G.

AU - Liu, Chuan H.

AU - Lee, Ming T.

AU - Fu, K. Y.

PY - 1999

Y1 - 1999

N2 - It is widely believed that stress-induced leakage current (SILC) and soft breakdown (SBD) of ultra-thin (tox <5 nm) gate oxides are due to trap-assisted tunneling (TAT). In this paper, through the use of carrier separation method and annealing experiments, we argue that SILC is not only contributed by trap-assisted tunneling of conduction band electrons but also by trap-assisted tunneling of valence band electrons. It is proposed in this paper that the traps are mainly donor-like.

AB - It is widely believed that stress-induced leakage current (SILC) and soft breakdown (SBD) of ultra-thin (tox <5 nm) gate oxides are due to trap-assisted tunneling (TAT). In this paper, through the use of carrier separation method and annealing experiments, we argue that SILC is not only contributed by trap-assisted tunneling of conduction band electrons but also by trap-assisted tunneling of valence band electrons. It is proposed in this paper that the traps are mainly donor-like.

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UR - http://www.scopus.com/inward/citedby.url?scp=0033282134&partnerID=8YFLogxK

M3 - Paper

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SP - 114

EP - 117

T2 - 1999 IEEE International Integrated Reliability Workshop

Y2 - 18 October 1999 through 21 October 1999

ER -

New experimental findings on SILC and SBD of ultra-thin gate oxides

Abstract

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ASJC Scopus subject areas

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