New experimental findings on SILC and SBD of ultra-thin gate oxides

M. G. Chen, Chuan H. Liu, Ming T. Lee, K. Y. Fu

Research output: Contribution to conferencePaper

Abstract

It is widely believed that stress-induced leakage current (SILC) and soft breakdown (SBD) of ultra-thin (tox <5 nm) gate oxides are due to trap-assisted tunneling (TAT). In this paper, through the use of carrier separation method and annealing experiments, we argue that SILC is not only contributed by trap-assisted tunneling of conduction band electrons but also by trap-assisted tunneling of valence band electrons. It is proposed in this paper that the traps are mainly donor-like.

Original languageEnglish
Pages114-117
Number of pages4
Publication statusPublished - 1999
Event1999 IEEE International Integrated Reliability Workshop - Lake Tahoe, CA, USA
Duration: 1999 Oct 181999 Oct 21

Other

Other1999 IEEE International Integrated Reliability Workshop
CityLake Tahoe, CA, USA
Period99/10/1899/10/21

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering

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    Chen, M. G., Liu, C. H., Lee, M. T., & Fu, K. Y. (1999). New experimental findings on SILC and SBD of ultra-thin gate oxides. 114-117. Paper presented at 1999 IEEE International Integrated Reliability Workshop, Lake Tahoe, CA, USA, .