New electrically conducting materials based on the dmit ligand

A. E. Pullen; K. A. Abboud; J. R. Reynolds; J. Piotraschke; S. Zeltner; R. M. Olk; E. Hoyer; Hsiang Lin Liu; D. B. Tanner

doi:10.1016/S0379-6779(97)80906-X

New electrically conducting materials based on the dmit ligand

A. E. Pullen, K. A. Abboud, J. R. Reynolds, J. Piotraschke, S. Zeltner, R. M. Olk, E. Hoyer, Hsiang Lin Liu, D. B. Tanner

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

Abstract

The synthesis, X-ray structure analysis and electrochemical characterization of a series of chalcogen-rich, extensively conjugated, and in some cases fully planar tetrathiooxalato bridged dmit-based bimetallic Cu(II) and Ni(II) complexes for molecular conducting materials are reported. Also reported is the synthesis and temperature-dependent electrical conductivity of the new dmit based anion radical salt complex (CH₃(C₆H₅)₃P) [Ni(dmit)₂]₃.

Original language	English
Pages (from-to)	1791-1793
Number of pages	3
Journal	Synthetic Metals
Volume	86
Issue number	1 -3 pt 3
DOIs	https://doi.org/10.1016/S0379-6779(97)80906-X
Publication status	Published - 1997 Jan 1
Event	Proceedings of the 1996 International Conference on Science and Technology of Synthetic Metals, ICSM'96. Part 3 (of 3) - Snowbird, UT, USA Duration: 1996 Jul 28 → 1996 Aug 2

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

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title = "New electrically conducting materials based on the dmit ligand",

abstract = "The synthesis, X-ray structure analysis and electrochemical characterization of a series of chalcogen-rich, extensively conjugated, and in some cases fully planar tetrathiooxalato bridged dmit-based bimetallic Cu(II) and Ni(II) complexes for molecular conducting materials are reported. Also reported is the synthesis and temperature-dependent electrical conductivity of the new dmit based anion radical salt complex (CH3(C6H5)3P) [Ni(dmit)2]3.",

author = "Pullen, {A. E.} and Abboud, {K. A.} and Reynolds, {J. R.} and J. Piotraschke and S. Zeltner and Olk, {R. M.} and E. Hoyer and Liu, {Hsiang Lin} and Tanner, {D. B.}",

year = "1997",

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doi = "10.1016/S0379-6779(97)80906-X",

language = "English",

volume = "86",

pages = "1791--1793",

journal = "Synthetic Metals",

issn = "0379-6779",

publisher = "Elsevier BV",

number = "1 -3 pt 3",

note = "Proceedings of the 1996 International Conference on Science and Technology of Synthetic Metals, ICSM'96. Part 3 (of 3) ; Conference date: 28-07-1996 Through 02-08-1996",

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TY - JOUR

T1 - New electrically conducting materials based on the dmit ligand

AU - Pullen, A. E.

AU - Abboud, K. A.

AU - Reynolds, J. R.

AU - Piotraschke, J.

AU - Zeltner, S.

AU - Olk, R. M.

AU - Hoyer, E.

AU - Liu, Hsiang Lin

AU - Tanner, D. B.

PY - 1997/1/1

Y1 - 1997/1/1

N2 - The synthesis, X-ray structure analysis and electrochemical characterization of a series of chalcogen-rich, extensively conjugated, and in some cases fully planar tetrathiooxalato bridged dmit-based bimetallic Cu(II) and Ni(II) complexes for molecular conducting materials are reported. Also reported is the synthesis and temperature-dependent electrical conductivity of the new dmit based anion radical salt complex (CH3(C6H5)3P) [Ni(dmit)2]3.

AB - The synthesis, X-ray structure analysis and electrochemical characterization of a series of chalcogen-rich, extensively conjugated, and in some cases fully planar tetrathiooxalato bridged dmit-based bimetallic Cu(II) and Ni(II) complexes for molecular conducting materials are reported. Also reported is the synthesis and temperature-dependent electrical conductivity of the new dmit based anion radical salt complex (CH3(C6H5)3P) [Ni(dmit)2]3.

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U2 - 10.1016/S0379-6779(97)80906-X

DO - 10.1016/S0379-6779(97)80906-X

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SP - 1791

EP - 1793

JO - Synthetic Metals

JF - Synthetic Metals

SN - 0379-6779

IS - 1 -3 pt 3

T2 - Proceedings of the 1996 International Conference on Science and Technology of Synthetic Metals, ICSM'96. Part 3 (of 3)

Y2 - 28 July 1996 through 2 August 1996

ER -