Negative differential resistance induced by sulfur vacancies in monolayer MoS2 transistors

Wen Hao Chang, Chun I. Lu, Tilo H. Yang, Shu Ting Yang, Kristan Bryan Simbulan, Ting Hua Lu, Yann Wen Lan*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Extensive research has been conducted on the negative differential resistance (NDR) behavior in various electronic applications. Theoretical simulations suggest that defects in monolayer 2D materials could impact the NDR phenomenon. In this study, we experimentally validated this theoretical prediction using straightforward fabrication methods on monolayer MoS2. To create MoS2 transistors with a specific amount of sulfur vacancy, we employed techniques such as KOH solution treatment, electron beam irradiation, and chemical vapor deposition (CVD) using low sulfur supply. Through comprehensive analysis of the devices’ electrical characteristics and spectroscopic examination, we successfully observed the NDR in the defective monolayer MoS2 field-effect transistors (FETs) with approximately 5% sulfur vacancy, as confirmed by X-ray photoelectron spectroscopy (XPS). Moreover, this NDR effect remains stable and can be controlled by the gate electric field or light intensity at room temperature. This discovery suggests that the NDR effect in monolayer MoS2 transistors holds promising potential for future electronic applications.

Original languageEnglish
Title of host publicationLow-Dimensional Materials and Devices 2023
EditorsNobuhiko P. Kobayashi, A. Alec Talin, Albert V. Davydov, M. Saif Islam
ISBN (Electronic)9781510665163
Publication statusPublished - 2023
EventLow-Dimensional Materials and Devices 2023 - San Diego, United States
Duration: 2023 Aug 212023 Aug 23

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X


ConferenceLow-Dimensional Materials and Devices 2023
Country/TerritoryUnited States
CitySan Diego


  • MoS2
  • NDR
  • Raman
  • XPS
  • defect
  • vacancy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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