Negative-Capacitance FinFET Inverter, Ring Oscillator, SRAM Cell, and Ft

Kai Shin Li; Yun Jie Wei; Yi Ju Chen; Wen Cheng Chiu; Hsiu Chih Chen; Min Hung Lee; Yu Fan Chiu; Fu Kuo Hsueh; Bo Wei Wu; Pin Guang Chen; Tung Yan Lai; Chun Chi Chen; Jia Min Shieh; Wen Kuan Yeh; Sayeef Salahuddin; Chenming Hu

doi:10.1109/IEDM.2018.8614521

Negative-Capacitance FinFET Inverter, Ring Oscillator, SRAM Cell, and Ft

Kai Shin Li
, Yun Jie Wei
, Yi Ju Chen
, Wen Cheng Chiu
, Hsiu Chih Chen
, Min Hung Lee
, Yu Fan Chiu
, Fu Kuo Hsueh
, Bo Wei Wu
, Pin Guang Chen
, Tung Yan Lai
, Chun Chi Chen
, Jia Min Shieh
, Wen Kuan Yeh
, Sayeef Salahuddin
, Chenming Hu

Undergraduate Program of Electro-Optical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

26 Citations (Scopus)

Abstract

In this work, we use thermal-ALD to prepare ferroelectric HfZrO₂ (HZO) thin film with thickness from 3 to 7 nm for the NC-FinFET's gate stack. The subthreshold swing (SS) was as low as 5 mV/dec (SSmin) over 4 orders of I_D. Lower thermal budget process, CO₂ far-infrared laser activation and 400°C Ni silicide are employed in the 2-level metal backend integration for maintaining the orthorhombic phase in HZO thin film and minimizing the hysteresis in IV. NC-FinFET inverter has 77% higher voltage gain compared to FinFET-inverter employing HfO₂ gate dielectric. NC-FinFET ring oscillator exhibit small speed and power advantages over FinFET oscillator. For the first time, NC-FET cut-off frequency (F_t) frequency is measured, 23.1 GHz or 23% higher than the control FET Ft. NC-FinFET SRAM was observed to exhibit large noise margin.

Original language	English
Title of host publication	2018 IEEE International Electron Devices Meeting, IEDM 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	31.7.1-31.7.4
ISBN (Electronic)	9781728119878
DOIs	https://doi.org/10.1109/IEDM.2018.8614521
Publication status	Published - 2018 Jul 2
Event	64th Annual IEEE International Electron Devices Meeting, IEDM 2018 - San Francisco, United States Duration: 2018 Dec 1 → 2018 Dec 5

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2018-December
ISSN (Print)	0163-1918

Conference

Conference	64th Annual IEEE International Electron Devices Meeting, IEDM 2018
Country/Territory	United States
City	San Francisco
Period	2018/12/01 → 2018/12/05

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM.2018.8614521

Cite this

Li, K. S., Wei, Y. J., Chen, Y. J., Chiu, W. C., Chen, H. C., Lee, M. H., Chiu, Y. F., Hsueh, F. K., Wu, B. W., Chen, P. G., Lai, T. Y., Chen, C. C., Shieh, J. M., Yeh, W. K., Salahuddin, S., & Hu, C. (2018). Negative-Capacitance FinFET Inverter, Ring Oscillator, SRAM Cell, and Ft. In 2018 IEEE International Electron Devices Meeting, IEDM 2018 (pp. 31.7.1-31.7.4). Article 8614521 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2018-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2018.8614521

Negative-Capacitance FinFET Inverter, Ring Oscillator, SRAM Cell, and Ft. / Li, Kai Shin; Wei, Yun Jie; Chen, Yi Ju et al.
2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 31.7.1-31.7.4 8614521 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2018-December).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Li, KS, Wei, YJ, Chen, YJ, Chiu, WC, Chen, HC, Lee, MH, Chiu, YF, Hsueh, FK, Wu, BW, Chen, PG, Lai, TY, Chen, CC, Shieh, JM, Yeh, WK, Salahuddin, S & Hu, C 2018, Negative-Capacitance FinFET Inverter, Ring Oscillator, SRAM Cell, and Ft. in 2018 IEEE International Electron Devices Meeting, IEDM 2018., 8614521, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2018-December, Institute of Electrical and Electronics Engineers Inc., pp. 31.7.1-31.7.4, 64th Annual IEEE International Electron Devices Meeting, IEDM 2018, San Francisco, United States, 2018/12/01. https://doi.org/10.1109/IEDM.2018.8614521

Li KS, Wei YJ, Chen YJ, Chiu WC, Chen HC, Lee MH et al. Negative-Capacitance FinFET Inverter, Ring Oscillator, SRAM Cell, and Ft. In 2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 31.7.1-31.7.4. 8614521. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2018.8614521

@inproceedings{9992dacb023d4d3ab27903f308670fae,

title = "Negative-Capacitance FinFET Inverter, Ring Oscillator, SRAM Cell, and Ft",

abstract = "In this work, we use thermal-ALD to prepare ferroelectric HfZrO2 (HZO) thin film with thickness from 3 to 7 nm for the NC-FinFET's gate stack. The subthreshold swing (SS) was as low as 5 mV/dec (SSmin) over 4 orders of ID. Lower thermal budget process, CO2 far-infrared laser activation and 400°C Ni silicide are employed in the 2-level metal backend integration for maintaining the orthorhombic phase in HZO thin film and minimizing the hysteresis in IV. NC-FinFET inverter has 77\% higher voltage gain compared to FinFET-inverter employing HfO2 gate dielectric. NC-FinFET ring oscillator exhibit small speed and power advantages over FinFET oscillator. For the first time, NC-FET cut-off frequency (Ft) frequency is measured, 23.1 GHz or 23\% higher than the control FET Ft. NC-FinFET SRAM was observed to exhibit large noise margin.",

author = "Li, \{Kai Shin\} and Wei, \{Yun Jie\} and Chen, \{Yi Ju\} and Chiu, \{Wen Cheng\} and Chen, \{Hsiu Chih\} and Lee, \{Min Hung\} and Chiu, \{Yu Fan\} and Hsueh, \{Fu Kuo\} and Wu, \{Bo Wei\} and Chen, \{Pin Guang\} and Lai, \{Tung Yan\} and Chen, \{Chun Chi\} and Shieh, \{Jia Min\} and Yeh, \{Wen Kuan\} and Sayeef Salahuddin and Chenming Hu",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 64th Annual IEEE International Electron Devices Meeting, IEDM 2018 ; Conference date: 01-12-2018 Through 05-12-2018",

year = "2018",

month = jul,

day = "2",

doi = "10.1109/IEDM.2018.8614521",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "31.7.1--31.7.4",

booktitle = "2018 IEEE International Electron Devices Meeting, IEDM 2018",

}

TY - GEN

T1 - Negative-Capacitance FinFET Inverter, Ring Oscillator, SRAM Cell, and Ft

AU - Li, Kai Shin

AU - Wei, Yun Jie

AU - Chen, Yi Ju

AU - Chiu, Wen Cheng

AU - Chen, Hsiu Chih

AU - Lee, Min Hung

AU - Chiu, Yu Fan

AU - Hsueh, Fu Kuo

AU - Wu, Bo Wei

AU - Chen, Pin Guang

AU - Lai, Tung Yan

AU - Chen, Chun Chi

AU - Shieh, Jia Min

AU - Yeh, Wen Kuan

AU - Salahuddin, Sayeef

AU - Hu, Chenming

PY - 2018/7/2

Y1 - 2018/7/2

N2 - In this work, we use thermal-ALD to prepare ferroelectric HfZrO2 (HZO) thin film with thickness from 3 to 7 nm for the NC-FinFET's gate stack. The subthreshold swing (SS) was as low as 5 mV/dec (SSmin) over 4 orders of ID. Lower thermal budget process, CO2 far-infrared laser activation and 400°C Ni silicide are employed in the 2-level metal backend integration for maintaining the orthorhombic phase in HZO thin film and minimizing the hysteresis in IV. NC-FinFET inverter has 77% higher voltage gain compared to FinFET-inverter employing HfO2 gate dielectric. NC-FinFET ring oscillator exhibit small speed and power advantages over FinFET oscillator. For the first time, NC-FET cut-off frequency (Ft) frequency is measured, 23.1 GHz or 23% higher than the control FET Ft. NC-FinFET SRAM was observed to exhibit large noise margin.

AB - In this work, we use thermal-ALD to prepare ferroelectric HfZrO2 (HZO) thin film with thickness from 3 to 7 nm for the NC-FinFET's gate stack. The subthreshold swing (SS) was as low as 5 mV/dec (SSmin) over 4 orders of ID. Lower thermal budget process, CO2 far-infrared laser activation and 400°C Ni silicide are employed in the 2-level metal backend integration for maintaining the orthorhombic phase in HZO thin film and minimizing the hysteresis in IV. NC-FinFET inverter has 77% higher voltage gain compared to FinFET-inverter employing HfO2 gate dielectric. NC-FinFET ring oscillator exhibit small speed and power advantages over FinFET oscillator. For the first time, NC-FET cut-off frequency (Ft) frequency is measured, 23.1 GHz or 23% higher than the control FET Ft. NC-FinFET SRAM was observed to exhibit large noise margin.

UR - https://www.scopus.com/pages/publications/85061838616

UR - https://www.scopus.com/pages/publications/85061838616#tab=citedBy

U2 - 10.1109/IEDM.2018.8614521

DO - 10.1109/IEDM.2018.8614521

M3 - Conference contribution

AN - SCOPUS:85061838616

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 31.7.1-31.7.4

BT - 2018 IEEE International Electron Devices Meeting, IEDM 2018

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 64th Annual IEEE International Electron Devices Meeting, IEDM 2018

Y2 - 1 December 2018 through 5 December 2018

ER -

Negative-Capacitance FinFET Inverter, Ring Oscillator, SRAM Cell, and Ft

Abstract

Publication series

Conference

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this