Negative-Capacitance FinFET Inverter, Ring Oscillator, SRAM Cell, and Ft

Kai Shin Li, Yun Jie Wei, Yi Ju Chen, Wen Cheng Chiu, Hsiu Chih Chen, Min Hung Lee, Yu Fan Chiu, Fu Kuo Hsueh, Bo Wei Wu, Pin Guang Chen, Tung Yan Lai, Chun Chi Chen, Jia Min Shieh, Wen Kuan Yeh, Sayeef Salahuddin, Chenming Hu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

In this work, we use thermal-ALD to prepare ferroelectric HfZrO 2 (HZO) thin film with thickness from 3 to 7 nm for the NC-FinFET's gate stack. The subthreshold swing (SS) was as low as 5 mV/dec (SSmin) over 4 orders of I D . Lower thermal budget process, CO 2 far-infrared laser activation and 400°C Ni silicide are employed in the 2-level metal backend integration for maintaining the orthorhombic phase in HZO thin film and minimizing the hysteresis in IV. NC-FinFET inverter has 77% higher voltage gain compared to FinFET-inverter employing HfO 2 gate dielectric. NC-FinFET ring oscillator exhibit small speed and power advantages over FinFET oscillator. For the first time, NC-FET cut-off frequency (F t ) frequency is measured, 23.1 GHz or 23% higher than the control FET Ft. NC-FinFET SRAM was observed to exhibit large noise margin.

Original languageEnglish
Title of host publication2018 IEEE International Electron Devices Meeting, IEDM 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages31.7.1-31.7.4
ISBN (Electronic)9781728119878
DOIs
Publication statusPublished - 2019 Jan 16
Event64th Annual IEEE International Electron Devices Meeting, IEDM 2018 - San Francisco, United States
Duration: 2018 Dec 12018 Dec 5

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2018-December
ISSN (Print)0163-1918

Conference

Conference64th Annual IEEE International Electron Devices Meeting, IEDM 2018
CountryUnited States
CitySan Francisco
Period18/12/118/12/5

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Li, K. S., Wei, Y. J., Chen, Y. J., Chiu, W. C., Chen, H. C., Lee, M. H., Chiu, Y. F., Hsueh, F. K., Wu, B. W., Chen, P. G., Lai, T. Y., Chen, C. C., Shieh, J. M., Yeh, W. K., Salahuddin, S., & Hu, C. (2019). Negative-Capacitance FinFET Inverter, Ring Oscillator, SRAM Cell, and Ft. In 2018 IEEE International Electron Devices Meeting, IEDM 2018 (pp. 31.7.1-31.7.4). [8614521] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2018-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2018.8614521