Negative capacitance FETs with steep switching by ferroelectric Hf-based oxide

M. H. Lee; P. G. Chen; S. T. Fan; C. Y. Kuo; H. H. Chen; S. S. Gu; Y. C. Chou; C. H. Tang; R. C. Hong; Z. Y. Wang; M. H. Liao; K. S. Li; M. C. Chen; C. W. Liu

doi:10.1109/VLSI-TSA.2017.7942466

Negative capacitance FETs with steep switching by ferroelectric Hf-based oxide

M. H. Lee^*, P. G. Chen, S. T. Fan, C. Y. Kuo, H. H. Chen, S. S. Gu, Y. C. Chou, C. H. Tang, R. C. Hong, Z. Y. Wang, M. H. Liao, K. S. Li, M. C. Chen, C. W. Liu

^*Corresponding author for this work

Undergraduate Program of Electro-Optical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Citations (Scopus)

Abstract

Ferroelectric HfZrOx (FE-HZO) negative capacitance (NC) FETs is experimentally demonstrated with physical thickness 1.5 nm after annealing 800°C for subthreshold swing (SS) < 60 mV/dec and hysteresis free. The relation between SS and FE-HZO thickness is also discussed. The NC-FinFET modeling is validated on standard 14nm FinFET. The feasible concept of coupling the polarization Hf-based oxide was applied, which were experimentally established with the validity of the negative capacitance effect.

Original language	English
Title of host publication	2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781509058051
DOIs	https://doi.org/10.1109/VLSI-TSA.2017.7942466
Publication status	Published - 2017 Jun 7
Event	2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017 - Hsinchu, Taiwan Duration: 2017 Apr 24 → 2017 Apr 27

Publication series

Name	2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017

Other

Other	2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017
Country/Territory	Taiwan
City	Hsinchu
Period	2017/04/24 → 2017/04/27

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

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10.1109/VLSI-TSA.2017.7942466

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Lee, M. H., Chen, P. G., Fan, S. T., Kuo, C. Y., Chen, H. H., Gu, S. S., Chou, Y. C., Tang, C. H., Hong, R. C., Wang, Z. Y., Liao, M. H., Li, K. S., Chen, M. C., & Liu, C. W. (2017). Negative capacitance FETs with steep switching by ferroelectric Hf-based oxide. In 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017 Article 7942466 (2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA.2017.7942466

Negative capacitance FETs with steep switching by ferroelectric Hf-based oxide. / Lee, M. H.; Chen, P. G.; Fan, S. T. et al.
2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017. Institute of Electrical and Electronics Engineers Inc., 2017. 7942466 (2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Lee, MH, Chen, PG, Fan, ST, Kuo, CY, Chen, HH, Gu, SS, Chou, YC, Tang, CH, Hong, RC, Wang, ZY, Liao, MH, Li, KS, Chen, MC & Liu, CW 2017, Negative capacitance FETs with steep switching by ferroelectric Hf-based oxide. in 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017., 7942466, 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017, Institute of Electrical and Electronics Engineers Inc., 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017, Hsinchu, Taiwan, 2017/04/24. https://doi.org/10.1109/VLSI-TSA.2017.7942466

Lee MH, Chen PG, Fan ST, Kuo CY, Chen HH, Gu SS et al. Negative capacitance FETs with steep switching by ferroelectric Hf-based oxide. In 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017. Institute of Electrical and Electronics Engineers Inc. 2017. 7942466. (2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017). doi: 10.1109/VLSI-TSA.2017.7942466

@inproceedings{dba02082613f41ed9175aa55c7bdc92b,

title = "Negative capacitance FETs with steep switching by ferroelectric Hf-based oxide",

abstract = "Ferroelectric HfZrOx (FE-HZO) negative capacitance (NC) FETs is experimentally demonstrated with physical thickness 1.5 nm after annealing 800°C for subthreshold swing (SS) < 60 mV/dec and hysteresis free. The relation between SS and FE-HZO thickness is also discussed. The NC-FinFET modeling is validated on standard 14nm FinFET. The feasible concept of coupling the polarization Hf-based oxide was applied, which were experimentally established with the validity of the negative capacitance effect.",

author = "Lee, {M. H.} and Chen, {P. G.} and Fan, {S. T.} and Kuo, {C. Y.} and Chen, {H. H.} and Gu, {S. S.} and Chou, {Y. C.} and Tang, {C. H.} and Hong, {R. C.} and Wang, {Z. Y.} and Liao, {M. H.} and Li, {K. S.} and Chen, {M. C.} and Liu, {C. W.}",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017 ; Conference date: 24-04-2017 Through 27-04-2017",

year = "2017",

month = jun,

day = "7",

doi = "10.1109/VLSI-TSA.2017.7942466",

language = "English",

series = "2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Negative capacitance FETs with steep switching by ferroelectric Hf-based oxide

AU - Lee, M. H.

AU - Chen, P. G.

AU - Fan, S. T.

AU - Kuo, C. Y.

AU - Chen, H. H.

AU - Gu, S. S.

AU - Chou, Y. C.

AU - Tang, C. H.

AU - Hong, R. C.

AU - Wang, Z. Y.

AU - Liao, M. H.

AU - Li, K. S.

AU - Chen, M. C.

AU - Liu, C. W.

PY - 2017/6/7

Y1 - 2017/6/7

N2 - Ferroelectric HfZrOx (FE-HZO) negative capacitance (NC) FETs is experimentally demonstrated with physical thickness 1.5 nm after annealing 800°C for subthreshold swing (SS) < 60 mV/dec and hysteresis free. The relation between SS and FE-HZO thickness is also discussed. The NC-FinFET modeling is validated on standard 14nm FinFET. The feasible concept of coupling the polarization Hf-based oxide was applied, which were experimentally established with the validity of the negative capacitance effect.

AB - Ferroelectric HfZrOx (FE-HZO) negative capacitance (NC) FETs is experimentally demonstrated with physical thickness 1.5 nm after annealing 800°C for subthreshold swing (SS) < 60 mV/dec and hysteresis free. The relation between SS and FE-HZO thickness is also discussed. The NC-FinFET modeling is validated on standard 14nm FinFET. The feasible concept of coupling the polarization Hf-based oxide was applied, which were experimentally established with the validity of the negative capacitance effect.

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DO - 10.1109/VLSI-TSA.2017.7942466

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T3 - 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017

BT - 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017

Y2 - 24 April 2017 through 27 April 2017

ER -

Negative capacitance FETs with steep switching by ferroelectric Hf-based oxide

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