Negative capacitance FETs with steep switching by ferroelectric Hf-based oxide

Min-Hung Lee, P. G. Chen, S. T. Fan, C. Y. Kuo, H. H. Chen, S. S. Gu, Y. C. Chou, C. H. Tang, R. C. Hong, Z. Y. Wang, M. H. Liao, K. S. Li, M. C. Chen, C. W. Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Ferroelectric HfZrOx (FE-HZO) negative capacitance (NC) FETs is experimentally demonstrated with physical thickness 1.5 nm after annealing 800°C for subthreshold swing (SS) < 60 mV/dec and hysteresis free. The relation between SS and FE-HZO thickness is also discussed. The NC-FinFET modeling is validated on standard 14nm FinFET. The feasible concept of coupling the polarization Hf-based oxide was applied, which were experimentally established with the validity of the negative capacitance effect.

Original languageEnglish
Title of host publication2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509058051
DOIs
Publication statusPublished - 2017 Jun 7
Event2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017 - Hsinchu, Taiwan
Duration: 2017 Apr 242017 Apr 27

Publication series

Name2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017

Other

Other2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017
CountryTaiwan
CityHsinchu
Period17/4/2417/4/27

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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    Lee, M-H., Chen, P. G., Fan, S. T., Kuo, C. Y., Chen, H. H., Gu, S. S., Chou, Y. C., Tang, C. H., Hong, R. C., Wang, Z. Y., Liao, M. H., Li, K. S., Chen, M. C., & Liu, C. W. (2017). Negative capacitance FETs with steep switching by ferroelectric Hf-based oxide. In 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017 [7942466] (2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA.2017.7942466