Negative capacitance FETs with steep switching by ferroelectric Hf-based oxide

Min-Hung Lee, P. G. Chen, S. T. Fan, C. Y. Kuo, H. H. Chen, S. S. Gu, Y. C. Chou, C. H. Tang, R. C. Hong, Z. Y. Wang, M. H. Liao, K. S. Li, M. C. Chen, C. W. Liu

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    2 Citations (Scopus)

    Abstract

    Ferroelectric HfZrOx (FE-HZO) negative capacitance (NC) FETs is experimentally demonstrated with physical thickness 1.5 nm after annealing 800°C for subthreshold swing (SS) < 60 mV/dec and hysteresis free. The relation between SS and FE-HZO thickness is also discussed. The NC-FinFET modeling is validated on standard 14nm FinFET. The feasible concept of coupling the polarization Hf-based oxide was applied, which were experimentally established with the validity of the negative capacitance effect.

    Original languageEnglish
    Title of host publication2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    ISBN (Electronic)9781509058051
    DOIs
    Publication statusPublished - 2017 Jun 7
    Event2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017 - Hsinchu, Taiwan
    Duration: 2017 Apr 242017 Apr 27

    Publication series

    Name2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017

    Other

    Other2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017
    CountryTaiwan
    CityHsinchu
    Period2017/04/242017/04/27

    ASJC Scopus subject areas

    • Hardware and Architecture
    • Electrical and Electronic Engineering

    Fingerprint Dive into the research topics of 'Negative capacitance FETs with steep switching by ferroelectric Hf-based oxide'. Together they form a unique fingerprint.

    Cite this