Near-Infrared Laser-Annealed IZO Flexible Device as a Sensitive H2S Sensor at Room Temperature

Po Yi Chang; Po Yi Chang; Po Yi Chang; Ching Fu Lin; Ching Fu Lin; Ching Fu Lin; Samer El Khoury Rouphael; Samer El Khoury Rouphael; Ting Hsuan Huang; Chang Mao Wu; Dominique Berling; Dominique Berling; Ping Hung Yeh; Chia Jung Lu; Hsin Fei Meng; Hsiao Wen Zan; Olivier Soppera; Olivier Soppera

doi:10.1021/acsami.0c03257

Near-Infrared Laser-Annealed IZO Flexible Device as a Sensitive H₂S Sensor at Room Temperature

Po Yi Chang
, Po Yi Chang
, Po Yi Chang
, Ching Fu Lin
, Ching Fu Lin
, Ching Fu Lin
, Samer El Khoury Rouphael
, Samer El Khoury Rouphael
, Ting Hsuan Huang
, Chang Mao Wu
, Dominique Berling
, Dominique Berling
, Ping Hung Yeh
, Chia Jung Lu
, Hsin Fei Meng
, Hsiao Wen Zan^*
, Olivier Soppera^*
, Olivier Soppera^*

^*Corresponding author for this work

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

A metal-oxide material (indium zinc oxide [IZO]) device with near-infrared (NIR) laser annealing was demonstrated on both glass and bendable plastic substrates (polycarbonate, polyethylene, and polyethylene terephthalate). After only 60 s, the sheet resistance of IZO films annealed with a laser was comparable to that of thermal-annealed devices at temperatures in the range of 200-300 °C (1 h). XPS, ATR, and AFM were used to investigate the changes in the sheet resistance and correlate them to the composition and morphology of the thin film. Finally, the NIR-laser-annealed IZO films were demonstrated to be capable of detecting changes in humidity and serving as a highly sensitive gas sensor of hydrogen sulfide (in ppb concentration), with room-temperature operation on a bendable substrate.

Original language	English
Pages (from-to)	24984-24991
Number of pages	8
Journal	ACS Applied Materials and Interfaces
Volume	12
Issue number	22
DOIs	https://doi.org/10.1021/acsami.0c03257
Publication status	Published - 2020 Jun 3

Keywords

IZO
NIR
flexible
gas sensor
laser annealing
sol-gel

ASJC Scopus subject areas

General Materials Science

Access to Document

10.1021/acsami.0c03257

Cite this

Chang, P. Y., Chang, P. Y., Chang, P. Y., Lin, C. F., Lin, C. F., Lin, C. F., El Khoury Rouphael, S., El Khoury Rouphael, S., Huang, T. H., Wu, C. M., Berling, D., Berling, D., Yeh, P. H., Lu, C. J., Meng, H. F., Zan, H. W., Soppera, O., & Soppera, O. (2020). Near-Infrared Laser-Annealed IZO Flexible Device as a Sensitive H₂S Sensor at Room Temperature. ACS Applied Materials and Interfaces, 12(22), 24984-24991. https://doi.org/10.1021/acsami.0c03257

Chang, PY, Chang, PY, Chang, PY, Lin, CF, Lin, CF, Lin, CF, El Khoury Rouphael, S, El Khoury Rouphael, S, Huang, TH, Wu, CM, Berling, D, Berling, D, Yeh, PH, Lu, CJ, Meng, HF, Zan, HW, Soppera, O & Soppera, O 2020, 'Near-Infrared Laser-Annealed IZO Flexible Device as a Sensitive H₂S Sensor at Room Temperature', ACS Applied Materials and Interfaces, vol. 12, no. 22, pp. 24984-24991. https://doi.org/10.1021/acsami.0c03257

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title = "Near-Infrared Laser-Annealed IZO Flexible Device as a Sensitive H2S Sensor at Room Temperature",

abstract = "A metal-oxide material (indium zinc oxide [IZO]) device with near-infrared (NIR) laser annealing was demonstrated on both glass and bendable plastic substrates (polycarbonate, polyethylene, and polyethylene terephthalate). After only 60 s, the sheet resistance of IZO films annealed with a laser was comparable to that of thermal-annealed devices at temperatures in the range of 200-300 °C (1 h). XPS, ATR, and AFM were used to investigate the changes in the sheet resistance and correlate them to the composition and morphology of the thin film. Finally, the NIR-laser-annealed IZO films were demonstrated to be capable of detecting changes in humidity and serving as a highly sensitive gas sensor of hydrogen sulfide (in ppb concentration), with room-temperature operation on a bendable substrate.",

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AU - Huang, Ting Hsuan

AU - Wu, Chang Mao

AU - Berling, Dominique

AU - Yeh, Ping Hung

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AU - Meng, Hsin Fei

AU - Zan, Hsiao Wen

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