Near infrared filtering properties in photonic crystal containing extrinsic and dispersive semiconductor defect

Chi Chung Liu, Chien Jang Wu

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

In this work, near infrared filtering properties in a transmission narrowband filter are theoretically investigated. The filter is a defective photonic crystal of (LH)ND(HL)N, where N is the stack number, L is SiO2, H is InP, and defect layer D is an extrinsic semiconductor of n-type silicon (n-Si). It is found that there are multiple transmission peaks within the photonic band gap (PBG) as the defect thickness increases. The filtering position can be changed by varying the doping density in n-Si. That is, the peak (channel) wavelength is blued-shifted when the doping density increases. In the angle-dependent filtering property, the channel wavelength is also blued-shifted as the angle of incidence increases for both TE and TM waves. These filtering properties are of technical use in the applications of semiconductor optoelectronics.

Original languageEnglish
Pages (from-to)359-370
Number of pages12
JournalProgress in Electromagnetics Research
Volume137
DOIs
Publication statusPublished - 2013 Mar 5

Fingerprint

Crystal defects
Photonic crystals
photonics
Infrared radiation
defects
crystals
Doping (additives)
Semiconductor materials
filters
Photonic band gap
Wavelength
Defects
wavelengths
Optoelectronic devices
narrowband
incidence
Silicon
silicon

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Near infrared filtering properties in photonic crystal containing extrinsic and dispersive semiconductor defect. / Liu, Chi Chung; Wu, Chien Jang.

In: Progress in Electromagnetics Research, Vol. 137, 05.03.2013, p. 359-370.

Research output: Contribution to journalArticle

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