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Nature of the 2.8-eV photoluminescence band in Si-doped GaN
H. C. Yang
*
, T. Y. Lin, Y. F. Chen
*
Corresponding author for this work
Research output
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Contribution to journal
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Article
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peer-review
77
Citations (Scopus)
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Engineering & Materials Science
Photoluminescence
100%
Luminescence
90%
Oxygen
37%
Valence bands
27%
Conduction bands
26%
Defects
21%
Electron energy levels
17%
Spectroscopy
17%
Ions
14%
Chemical Compounds
Photoluminescence
47%
Luminiscence Type
43%
Donor Level
33%
Donor
28%
Valence Band
22%
Secondary Ion Mass Spectroscopy
22%
Conduction Band
22%
Photoluminescence Spectrum
20%
Blue
14%
Dioxygen
10%
Energy
9%
Time
7%
Physics & Astronomy
luminescence
46%
photoluminescence
43%
oxygen
27%
defects
17%
excitation
15%
mass spectroscopy
15%
conduction bands
13%
energy levels
12%
valence
11%
ions
7%