Nature of the 2.8-eV photoluminescence band in Si-doped GaN

H. C. Yang*, T. Y. Lin, Y. F. Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

82 Citations (Scopus)

Fingerprint

Dive into the research topics of 'Nature of the 2.8-eV photoluminescence band in Si-doped GaN'. Together they form a unique fingerprint.

INIS

Physics

Chemistry