Nature of the 2.8-eV photoluminescence band in Si-doped GaN

H. C. Yang*, T. Y. Lin, Y. F. Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

82 Citations (Scopus)


Investigation on the defect-related luminescence centered around 2.8 eV in Si-doped GaN epifilms is presented. It is found that the mechanism of this blue emission (BL) is quite different from that of the yellow luminescence (YL). By comparing the photoluminescence (PL) spectra obtained from either front-side or backside excitation and combining with the results of the BL and YL-related PL excitation and the secondary-ion-mass spectroscopy measurements, we propose that the 2.8-eV emission is the transition from the substitutional oxygen donor (ON) level at 0.25 eV above the conduction band to the VGa-ON complex acceptor. The energy level of the VGa-ON complex is found to be at 0.8 eV above the valence-band edge which is consistent with the theoretical calculation. In addition, we show that the VGa defect plays a key role in the link between the time evolution of the YL and BL spectra in GaN samples.

Original languageEnglish
Pages (from-to)12593-12596
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number19
Publication statusPublished - 2000 Nov 15

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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