TY - GEN
T1 - National Project on 45 to 32 nm metal oxide semiconductor field effect transistors for next century IC fabrications
AU - Hwang, Huey Liang
AU - Wang, C. W.
AU - Chang, K. H.
AU - Tsai, C. H.
AU - Leou, K. C.
AU - Chang-Liao, Kuei Shu
AU - Lu, Chun Chang
AU - Chang, S. C.
AU - Chiu, F. C.
AU - Liu, C. H.
AU - Chin, Albert
AU - Chang, Kow Ming
AU - Chen, Bwo Ning
PY - 2008
Y1 - 2008
N2 - It is well known that the Taiwan Semiconductor industries play the very key roles for the worldwide IC foundry, and the advanced research of nanoelectronics is the lifeline for its long term developments. Professor Huey-liang Hwang effectively integrated the most outstanding research team and resource in Taiwan on the National Project on Nanometer CMOS Transistors for the 21 century, which is sponsored by the Ministry of Economic Affairs of ROC. A dozen of Professors from NTHU (National Tsing Hua University) with expertise at the novel materials and analysis and NCTU (National Chiao Tung University) with expertise at devices and reliability are devoted to the studies and are in collaboration with the world-wide-known company such as TSMC, and breakthrough of the key technologies of 45-32 nm technologies are achieved. The objective of this project is focused on the development of advanced metal gate/high-k MOSFET for 45 nm node generation and beyond, the efforts include the world first successful suppression the oxide/Si interfacial layer formation by using a bi-layer composite of HfO2 3.2 nm (ALD)/HfO2 1.5 nm (MBE), the results show a dielectric constant of 16 and an EOT of 1.15 nm, a Dit was estimated to be 4.6xl011cm-2eV-1 with the leakage at Vfb-lV being 8.5x10-6 A/cm2. Also, the thermal stability of HfO2, HfAlOx alloy and Al2O 3/HfO2 stack, prepared by ALD were compared, the incorporation of Al in alloy form gave superior characteristics by retaining an
AB - It is well known that the Taiwan Semiconductor industries play the very key roles for the worldwide IC foundry, and the advanced research of nanoelectronics is the lifeline for its long term developments. Professor Huey-liang Hwang effectively integrated the most outstanding research team and resource in Taiwan on the National Project on Nanometer CMOS Transistors for the 21 century, which is sponsored by the Ministry of Economic Affairs of ROC. A dozen of Professors from NTHU (National Tsing Hua University) with expertise at the novel materials and analysis and NCTU (National Chiao Tung University) with expertise at devices and reliability are devoted to the studies and are in collaboration with the world-wide-known company such as TSMC, and breakthrough of the key technologies of 45-32 nm technologies are achieved. The objective of this project is focused on the development of advanced metal gate/high-k MOSFET for 45 nm node generation and beyond, the efforts include the world first successful suppression the oxide/Si interfacial layer formation by using a bi-layer composite of HfO2 3.2 nm (ALD)/HfO2 1.5 nm (MBE), the results show a dielectric constant of 16 and an EOT of 1.15 nm, a Dit was estimated to be 4.6xl011cm-2eV-1 with the leakage at Vfb-lV being 8.5x10-6 A/cm2. Also, the thermal stability of HfO2, HfAlOx alloy and Al2O 3/HfO2 stack, prepared by ALD were compared, the incorporation of Al in alloy form gave superior characteristics by retaining an
UR - http://www.scopus.com/inward/record.url?scp=63249116049&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=63249116049&partnerID=8YFLogxK
U2 - 10.1109/EDSSC.2008.4760691
DO - 10.1109/EDSSC.2008.4760691
M3 - Conference contribution
AN - SCOPUS:63249116049
SN - 9781424425402
T3 - 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
BT - 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
T2 - 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
Y2 - 8 December 2008 through 10 December 2008
ER -