Nanoscale potential fluctuation in non-stoichiometric HfOx and low resistive transport in RRAM

V. N. Kruchinin; V. Sh Aliev; T. V. Perevalov; D. R. Islamov; V. A. Gritsenko; I. P. Prosvirin; C. H. Cheng; A. Chin

doi:10.1016/j.mee.2015.04.091

Nanoscale potential fluctuation in non-stoichiometric HfO_x and low resistive transport in RRAM

V. N. Kruchinin, V. Sh Aliev, T. V. Perevalov, D. R. Islamov, V. A. Gritsenko^*, I. P. Prosvirin, C. H. Cheng, A. Chin

^*Corresponding author for this work

Department of Mechatronic Engineering

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

We study the structure of non-stoichiometric HfO_x films with variable composition using the methods of X-ray photoelectron spectroscopy and spectroscopic ellipsometry. HfO_x, to a first approximation, is a mixture of HfO₂ and Hf metal with a small amount (∼10-15%) of hafnium sub-oxides HfO_y (y<2). Spatial potential fluctuations, due to chemical compound fluctuations, lead to the percolation charge transport in such electronic systems. An application of these phenomena in resistive memory physics is discussed.

Original language	English
Pages (from-to)	165-167
Number of pages	3
Journal	Microelectronic Engineering
Volume	147
DOIs	https://doi.org/10.1016/j.mee.2015.04.091
Publication status	Published - 2015 Nov 1

Keywords

Hafnium sub-oxides
Nanoscale fluctuations
Percolation
Resistive memory

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Access to Document

10.1016/j.mee.2015.04.091

Cite this

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title = "Nanoscale potential fluctuation in non-stoichiometric HfOx and low resistive transport in RRAM",

abstract = "We study the structure of non-stoichiometric HfOx films with variable composition using the methods of X-ray photoelectron spectroscopy and spectroscopic ellipsometry. HfOx, to a first approximation, is a mixture of HfO2 and Hf metal with a small amount (∼10-15%) of hafnium sub-oxides HfOy (y<2). Spatial potential fluctuations, due to chemical compound fluctuations, lead to the percolation charge transport in such electronic systems. An application of these phenomena in resistive memory physics is discussed.",

keywords = "Hafnium sub-oxides, Nanoscale fluctuations, Percolation, Resistive memory",

author = "Kruchinin, {V. N.} and Aliev, {V. Sh} and Perevalov, {T. V.} and Islamov, {D. R.} and Gritsenko, {V. A.} and Prosvirin, {I. P.} and Cheng, {C. H.} and A. Chin",

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year = "2015",

month = nov,

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doi = "10.1016/j.mee.2015.04.091",

language = "English",

volume = "147",

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journal = "Microelectronic Engineering",

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T1 - Nanoscale potential fluctuation in non-stoichiometric HfOx and low resistive transport in RRAM

AU - Kruchinin, V. N.

AU - Aliev, V. Sh

AU - Perevalov, T. V.

AU - Islamov, D. R.

AU - Gritsenko, V. A.

AU - Prosvirin, I. P.

AU - Cheng, C. H.

AU - Chin, A.

PY - 2015/11/1

Y1 - 2015/11/1

N2 - We study the structure of non-stoichiometric HfOx films with variable composition using the methods of X-ray photoelectron spectroscopy and spectroscopic ellipsometry. HfOx, to a first approximation, is a mixture of HfO2 and Hf metal with a small amount (∼10-15%) of hafnium sub-oxides HfOy (y<2). Spatial potential fluctuations, due to chemical compound fluctuations, lead to the percolation charge transport in such electronic systems. An application of these phenomena in resistive memory physics is discussed.

AB - We study the structure of non-stoichiometric HfOx films with variable composition using the methods of X-ray photoelectron spectroscopy and spectroscopic ellipsometry. HfOx, to a first approximation, is a mixture of HfO2 and Hf metal with a small amount (∼10-15%) of hafnium sub-oxides HfOy (y<2). Spatial potential fluctuations, due to chemical compound fluctuations, lead to the percolation charge transport in such electronic systems. An application of these phenomena in resistive memory physics is discussed.

KW - Hafnium sub-oxides

KW - Nanoscale fluctuations

KW - Percolation

KW - Resistive memory

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