Nanoscale potential fluctuation in non-stoichiometric HfOx and low resistive transport in RRAM

V. N. Kruchinin, V. Sh Aliev, T. V. Perevalov, D. R. Islamov, V. A. Gritsenko, I. P. Prosvirin, Chun-Hu Cheng, A. Chin

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

We study the structure of non-stoichiometric HfOx films with variable composition using the methods of X-ray photoelectron spectroscopy and spectroscopic ellipsometry. HfOx, to a first approximation, is a mixture of HfO2 and Hf metal with a small amount (∼10-15%) of hafnium sub-oxides HfOy (y<2). Spatial potential fluctuations, due to chemical compound fluctuations, lead to the percolation charge transport in such electronic systems. An application of these phenomena in resistive memory physics is discussed.

Original languageEnglish
Pages (from-to)165-167
Number of pages3
JournalMicroelectronic Engineering
Volume147
DOIs
Publication statusPublished - 2015 Nov 1

Fingerprint

Hafnium
Chemical compounds
Spectroscopic ellipsometry
Oxides
Charge transfer
X ray photoelectron spectroscopy
Physics
Metals
Data storage equipment
chemical compounds
hafnium
Chemical analysis
ellipsometry
photoelectron spectroscopy
physics
oxides
approximation
electronics
metals
x rays

Keywords

  • Hafnium sub-oxides
  • Nanoscale fluctuations
  • Percolation
  • Resistive memory

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Kruchinin, V. N., Aliev, V. S., Perevalov, T. V., Islamov, D. R., Gritsenko, V. A., Prosvirin, I. P., ... Chin, A. (2015). Nanoscale potential fluctuation in non-stoichiometric HfOx and low resistive transport in RRAM. Microelectronic Engineering, 147, 165-167. https://doi.org/10.1016/j.mee.2015.04.091

Nanoscale potential fluctuation in non-stoichiometric HfOx and low resistive transport in RRAM. / Kruchinin, V. N.; Aliev, V. Sh; Perevalov, T. V.; Islamov, D. R.; Gritsenko, V. A.; Prosvirin, I. P.; Cheng, Chun-Hu; Chin, A.

In: Microelectronic Engineering, Vol. 147, 01.11.2015, p. 165-167.

Research output: Contribution to journalArticle

Kruchinin, VN, Aliev, VS, Perevalov, TV, Islamov, DR, Gritsenko, VA, Prosvirin, IP, Cheng, C-H & Chin, A 2015, 'Nanoscale potential fluctuation in non-stoichiometric HfOx and low resistive transport in RRAM', Microelectronic Engineering, vol. 147, pp. 165-167. https://doi.org/10.1016/j.mee.2015.04.091
Kruchinin VN, Aliev VS, Perevalov TV, Islamov DR, Gritsenko VA, Prosvirin IP et al. Nanoscale potential fluctuation in non-stoichiometric HfOx and low resistive transport in RRAM. Microelectronic Engineering. 2015 Nov 1;147:165-167. https://doi.org/10.1016/j.mee.2015.04.091
Kruchinin, V. N. ; Aliev, V. Sh ; Perevalov, T. V. ; Islamov, D. R. ; Gritsenko, V. A. ; Prosvirin, I. P. ; Cheng, Chun-Hu ; Chin, A. / Nanoscale potential fluctuation in non-stoichiometric HfOx and low resistive transport in RRAM. In: Microelectronic Engineering. 2015 ; Vol. 147. pp. 165-167.
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