Nanoscale potential fluctuation in non-stoichiometric HfOx and low resistive transport in RRAM

V. N. Kruchinin, V. Sh Aliev, T. V. Perevalov, D. R. Islamov, V. A. Gritsenko, I. P. Prosvirin, Chun-Hu Cheng, A. Chin

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

We study the structure of non-stoichiometric HfOx films with variable composition using the methods of X-ray photoelectron spectroscopy and spectroscopic ellipsometry. HfOx, to a first approximation, is a mixture of HfO2 and Hf metal with a small amount (∼10-15%) of hafnium sub-oxides HfOy (y<2). Spatial potential fluctuations, due to chemical compound fluctuations, lead to the percolation charge transport in such electronic systems. An application of these phenomena in resistive memory physics is discussed.

Original languageEnglish
Pages (from-to)165-167
Number of pages3
JournalMicroelectronic Engineering
Volume147
DOIs
Publication statusPublished - 2015 Nov 1

Keywords

  • Hafnium sub-oxides
  • Nanoscale fluctuations
  • Percolation
  • Resistive memory

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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    Kruchinin, V. N., Aliev, V. S., Perevalov, T. V., Islamov, D. R., Gritsenko, V. A., Prosvirin, I. P., Cheng, C-H., & Chin, A. (2015). Nanoscale potential fluctuation in non-stoichiometric HfOx and low resistive transport in RRAM. Microelectronic Engineering, 147, 165-167. https://doi.org/10.1016/j.mee.2015.04.091